Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si:H Single-Layer

Abstract

We employ the method of phase-modulated KrF excimer pulsed laser interference crystallization to fabricate nanometer-sized crystalline silicon (nc-Si) with the two-dimensional (2D) patterned distribution within the ultra-thin a-Si:H single-layer. The local crystallization occurs after interference laser irradiation under proper energy density. The results of atomic force microscopy, Raman scattering spectroscopy, cross-section transmission electron microscopy and scanning electron microscopy demonstrate that Si nano-crystallites are formed within the initial a-Si:H single-layer, selectively located in the discal regions with the diameter of 350 nm and patterned with the same 2D periodicity of 2.0 μm as the phase-shifting grating. The results show that the present method can be used to fabricate patterned nc-Si films for device applications.

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Acknowledgments

We would like to give special thanks to Prof. Juu Xu and Lin Kang of NJU for useful discussions and Prof.Xiaoning Zhao. Jiancang Shen and Xuefei Li of NJU for TEM and Raman and AFM measurements. The authors would also like to acknowledge the supports of State Key Program for Basic Research of China (Grant No.2001 CB 610503), the National Nature Science Foundation of China (Grant No.90101020 and 60071019), and Nature Science Foundation of Jiangsu Province (BK2001028. BG2001002). This work is also partly supported by the XPTND of Korea MOST.

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Correspondence to Xiaowei Wang.

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Wang, X., Qiao, F., Zhu, L. et al. Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si:H Single-Layer. MRS Online Proceedings Library 737, 324 (2002). https://doi.org/10.1557/PROC-737-F3.24

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