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Silicon Epitaxial Regrowth Passivation of SiGe Nanostructures Pattered by AFM Oxidation

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Abstract

SiGe quantum devices were demonstrated by AFM oxidation and selective wet etching with features size down to 50 nm. To passivate the devices and eliminate the interface states between Si/SiO2, low temperature regrowth of epitaxial silicon over strained SiGe has been tested. The silicon regrowth on Si0.8Ge0.2 was done by rapid thermal chemical vapor deposition (RTCVD) at 700 °C using a hydrogen pre-cleaning process at 800 °C and 10 torr. SIMS analysis and photoluminescence (PL) of strained SiGe capped with epitaxial regrown silicon show a clean interface. Nano-gaps between doped SiGe filled and overgrown with epitaxial silicon show an electrical insulating property at 4.2 K.

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Acknowledgment

This work was supported by ARO-MURI DAA655-98-1-0270 and DARPA.

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Authors and Affiliations

  1. Center for Photonics and Opto-Electronic Materials, Department of Electrical Engineering Princeton University, Princeton, NJ, 08544, USA

    Xiang-Zheng Bo, Leonid P. Rokhinson & J. C. Sturm

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  1. Xiang-Zheng Bo
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  2. Leonid P. Rokhinson
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  3. J. C. Sturm
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Correspondence to Xiang-Zheng Bo.

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Bo, XZ., Rokhinson, L.P. & Sturm, J.C. Silicon Epitaxial Regrowth Passivation of SiGe Nanostructures Pattered by AFM Oxidation. MRS Online Proceedings Library 737, 145 (2002). https://doi.org/10.1557/PROC-737-E14.5

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  • DOI: https://doi.org/10.1557/PROC-737-E14.5

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