We present a study of aqueous and plasma anodised aluminium oxide (Al2O3) and its performance in thin film transistors (TFTs). The current through the oxide was measured with aluminium electrodes and with one of the electrode replaced by poly(3-hexylthiophene)(P3HT). The current increased by up to 2 orders of magnitude with P3HT. The current increased further when the polymer was doped with different percentages of 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ). It was also found to be dependent on the thickness of the polymer film. Surprisingly, the oxide current fell to its initial value when the polymer film was removed. Two mechanisms may explain the behaviour in these devices: charge injection and/or displacement. C-V plots were obtained from the MOS capacitors and were frequency dependent. They also showed substantial hysteresis, with a lateral shift along the voltage axis. This indicates the presence of a mobile species that increases with the concentration of dopant. We deduce that much of the increased gate current is associated with displacement currents induced by ion motion.
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Raja, M., Lloyd, G., Sedghi, N. et al. Critical Considerations in Polymer Thin-Film Transistor (TFT) Dielectrics. MRS Online Proceedings Library 725, 65 (2002). https://doi.org/10.1557/PROC-725-P6.5