We have prepared and characterized thin film field effect transistors (FETs) of bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole) (BTQBT) and its derivatives. Preparation and characterization of the films were carried out under ultrahigh vacuum condition. Most materials examined showed p-type semiconducting behaviors. Among p-type molecules, BTQBT films deposited at room temperature showed the highest mobility and on/off ratio of 0.2 cm2/Vs and 108, respectively, at optimal film growth conditions. These performances are almost comparable to those of pentacene and polythiophene thin films, indicating that BTQBT molecule is a prominent semiconducting material for high-speed organic transistors. It was also found that a tetracyanoquinodimethane (TCNQ) derivative showed an n-type semiconducting behavior with an electron mobility of 8.9 x 10-4 cm2/Vs.
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G. Horowitz Adv. Mater. 10, 365(1998)
B. Crone, A. Dodabalapur, Y. -Y. Lin, R. W. Filas, Z. Bao, A. Laduca, R. Sarpeshkar, H. E. Katz and W. Li Nature 403, 521(2000)
H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu and E. P. Woo Science 290, 2423(2000)
Y. Maruyama Mol. Cryst. Liq. Cryst. 171, 287(1989)
K. Imaeda, Y. Li, Y. Yamashita, H. Inokuchi and M. Sano J. Mater. Chem. 5, 861(1995)
J. Xue and S. R. Forrest Appl. Phys. Lett. 79, 3714 (2001).
M. Takada, H. Graaf, Y. Yamashita and H. Tada Jpn. J. Appl. Phys. 41, L4 (2002).
Y. Yamashita, T. Suzuki, T. Mukai and G. Saito J. Chem. Soc., Chem. Commun. 1044 (1985).
Y. Yamashita, T. Suzuki, G. Saito and T. Mukai Chem. Lett. 1759 (1985).
Y. Yamashita, S. Tanaka, K. Imaeda and H. Inokuchi Chem. Lett. 1213 (1991).
Y. Yamashita, S. Tanaka, K. Imaeda, H. Inokuchi and M. Sano J. Org. Chem. 57, 5517 (1992).
H. Tada, H. Touda, M. Takada and K. Matsushige J. Porphyrins and Phthalocyanines 3, 667 (1999).
H. Tada, H. Touda, M. Takada and K. Matsushige Appl. Phys. Lett. 76, 873 (2000).
A. R. Brown, D. M. de Leeuw, E. J. Lous and E. E. Havinga Synth. Met. 66, 257 (1994).
Z. Bao, A. J. Lovinger and J. Brown J. Am. Chem. Soc. 120, 207 (1998).
A. Facchetti, Y. Deng, A. Wang, Y. Koide, H. Sirringhaus, T. J. Marks and R. H. Friend Angew. Chem. Int. Ed. 39, 4547 (2000).
R. C. Haddon, A. S. Perel, R. C. Morris, T. T. M. Palstra, A. F. Hebard and R. M. Fleming Appl. Phys. Lett. 67, 121 (1995)
K. Kudo, T. Sumimoto, K. Hiraga, S. Kuniyoshi and K. Tanaka Jpn. J. Appl. Phys. 36, 184 (1997)
C. Vaterlein, B. Ziegler, W. Gebauer, H. Neureiter, M. Stodt, M. S. Weaver, P. Bauerle, M. Sokolowski, D. D. C. Bradley and E. Umbach Synth. Met. 76, 133 (1996).
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Takada, M., Yamashita, Y. & Tada, H. Field Effect Transistors of BTQBT and its Derivatives. MRS Online Proceedings Library 725, 106 (2002). https://doi.org/10.1557/PROC-725-P10.6