Field Effect Transistors of BTQBT and its Derivatives

MRS Online Proceedings Library volume 725, Article number: 106 (2002) Cite this article

Abstract

We have prepared and characterized thin film field effect transistors (FETs) of bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole) (BTQBT) and its derivatives. Preparation and characterization of the films were carried out under ultrahigh vacuum condition. Most materials examined showed p-type semiconducting behaviors. Among p-type molecules, BTQBT films deposited at room temperature showed the highest mobility and on/off ratio of 0.2 cm2/Vs and 108, respectively, at optimal film growth conditions. These performances are almost comparable to those of pentacene and polythiophene thin films, indicating that BTQBT molecule is a prominent semiconducting material for high-speed organic transistors. It was also found that a tetracyanoquinodimethane (TCNQ) derivative showed an n-type semiconducting behavior with an electron mobility of 8.9 x 10-4 cm2/Vs.

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Affiliations

  1. Department of Functional Molecular Science, The Graduate University for Advanced Studies, 38 Myodaiji, Okazaki, 444-8585, Japan

    Masaki Takada

  2. Institute for Molecular Science, 38 Myodaiji, Okazaki, 444-8585, Japan

    Yoshiro Yamashita

  3. Department of Electronic Science and Technology, Tokyo Institute of Technology, Nagata-cho, Midori-ku, Yokohama, 226-8502, Japan

    Hirokazu Tada

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  1. Masaki Takada
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  2. Yoshiro Yamashita
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  3. Hirokazu Tada
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Correspondence to Masaki Takada.

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Takada, M., Yamashita, Y. & Tada, H. Field Effect Transistors of BTQBT and its Derivatives. MRS Online Proceedings Library 725, 106 (2002). https://doi.org/10.1557/PROC-725-P10.6

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