Epitaxial Perovskite LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Heterostructures for Ferroelectric Field Effect Memory Devices

MRS Online Proceedings Library volume 718, Article number: 91 (2002) Cite this article

Abstract

The ferroelectric field effect was demonstrated in epitaxial perovskite LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 heterostructures grown on (001) SrTiO3 single crystal substrates by pulsed laser deposition. A high degree of c-axis orientation and strong in-plane texture revealed by x-ray diffraction indicated the epitaxial crystallographic relationships between the layers. The heterostructure showed optimal ferroelectric hysteresis with remanent polarizations over 30 µC/cm2. The capacitance measurement as a function of voltage coupled with the measurement of channel resistance revealed the formation of a depletion layer in the semiconducting LaVO3. A ratio of ON- to OFF-state channel resistance of up to 2.5 was observed.

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  1. Department of Materials Science & Engineering, University of California, Berkeley, CA, 94720, USA

    Woong Choi & Tim Sands

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  1. Woong Choi
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  2. Tim Sands
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Correspondence to Woong Choi.

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Choi, W., Sands, T. Epitaxial Perovskite LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Heterostructures for Ferroelectric Field Effect Memory Devices. MRS Online Proceedings Library 718, 91 (2002). https://doi.org/10.1557/PROC-718-D9.1

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