Junction and Profile Analysis using Carrier Illumination

Abstract

Carrier Illumination™ (CI) is an optical technique for non-destructive in-line monitoring of post-anneal junction depth and pre-anneal PAI depth and dose with wafer mapping capabilities. This work intends to extend the use of the CI-measurements from a range-specific quantitative measurement towards a more universal quantitative analysis of junction depth, profile abruptness and implant dose. For that purpose this paper presents a systematic study of the CI response to a wide variety of post anneal implant processes, varying parameters including implant species, dose and energy, annealing condition, and surface preparation.

Samples containing B, BF2 and As-implants with and without Ge PAI layers, with junction depths between 10–120 nm, were measured. In addition near-ideal box-like profiles (as obtained with CVD-growth) were fabricated and measured. For the abrupt CVD profiles, CI measures the junction position with sub-nm resolution independent of the CI-analysis conditions. For more graded profiles resulting from annealed implants, the correlation to the SIMS junction depth becomes a function of generation laser current (which is proportional to the applied power). As the concentration level, at which the correlation is made, can be adjusted over a concentration range of approximately 2×1018 to 2×1019/cm3 by changing the laser current, a route towards correlating the CI measurement with profile abruptness becomes feasible.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    International Technology Roadmap for Semiconductors 2001.

  2. 2.

    P. Borden, L. Bechtler, K. Lingel and R. Nijmeijer, Carrier Illumination Characterization of Ultra-Shallow Implants, in Handbook of Silicon Semiconductor Metrology, edited by A.C. Diebold, (Dekker Inc., New-York, 2001), 97.

    Google Scholar 

  3. 3.

    D.C. Sing and P. Borden, Proceedings of the Sixth International Workshop on Fabrication, Characterization and Modeling of Ultra-Shallow doping profiles in Semiconductors, April 22–26, 2001, edited by M. Foad, (American Vacuum Society, New-York, 2001), 311

  4. 4.

    T. Clarysse, P. Eyben, T. Hantschel, W. Vandervorst, Material Science in Semiconductor Processing 4, 61 (2001)

    CAS  Article  Google Scholar 

  5. 5.

    T. Clarysse, W. Vandervorst, R. Lindsay, P. Borden, E. Budiarto, European Materials Research Society, Spring meeting, Symposium E, June 18–21, 2002, Strasbourg, France.

    Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to T. Clarysse.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Clarysse, T., Vandervorst, W., Lindsay, R. et al. Junction and Profile Analysis using Carrier Illumination. MRS Online Proceedings Library 717, 73 (2002). https://doi.org/10.1557/PROC-717-C7.3

Download citation