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Modeling Dislocation Loop Nucleation and Evolution in Germanium, Arsenic and Boron Implanted Silicon

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Abstract

A loop nucleation and evolution model in Si+ implanted Silicon was previously introduced [1]. In this study, the model is extended to predict end of range (EOR) and projected range defect nucleation and evolution created by different ion implant species such as Germanium, Arsenic and Boron. The model assumes that all the nucleated loops come from 311 unfaulting and the loop density and average loop radius follow a log normal distribution. The model is verified with the experimental data obtained from literature for Germanium [2], Arsenic [3] and Boron [4] implanted Silicon for different implant doses and energies. Modeling results are in agreement with the experimental results.

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Authors and Affiliations

  1. Swamp Center, Department of Electrical Engineering, University of Florida, NEB Room # 535, Gainesville, FL, 32611, USA

    Ibrahim Avci & Mark E. Law

Authors
  1. Ibrahim Avci
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  2. Mark E. Law
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Avci, I., Law, M.E. Modeling Dislocation Loop Nucleation and Evolution in Germanium, Arsenic and Boron Implanted Silicon. MRS Online Proceedings Library 717, 59 (2002). https://doi.org/10.1557/PROC-717-C5.9

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  • DOI: https://doi.org/10.1557/PROC-717-C5.9

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