Growth conditions for epitaxy of Si1-x-yGexCx and Si1-xCx alloy layers on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane as the silicon source gas are described and the Si1-xCx conditions are compared to previously reported RTCVD growth conditions for epitaxy of Si1-xCx using silane as the source gas. The thermal stability of the layers at 850°C in nitrogen is examined using x-ray diffraction as a measure of the average substitutional carbon concentration in the layers after annealing. A characteristic time constant to describe the reduction of average substitutional carbon concentration in the layer is extracted from the XRD measurements. The characteristic time constants are found to agree within a factor of 3 with that observed in previous reports. However, the time constants are found to depend more strongly on the as-grown substitutional carbon concentration than what is predicted by simple precipitation kinetics, assuming carbon diffusion to a constant number of nucleation centers.
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Carroll, M.S., Sturm, J.C., Napolitani, E. et al. Thermal Stability and Substitutional Carbon Incorporation far above Solid-Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition using Disilane. MRS Online Proceedings Library 717, 43 (2002). https://doi.org/10.1557/PROC-717-C4.3