In summary, we find it is possible to model the extent of arsenic diffusion during front-end and back-end processes that define the final junction depth. The key features of the model can be summarised as: (a) Interstitials from implant damage play a diminished role as implant energies are scaled; (b) As4V formation and precipitation at high concentrations is critical to accurate modeling of ultra-shallow arsenic junctions. These models when used with device simulations help optimize transistor performance/tradeoffs.
We would like to thank Pavel Fastenko and Scott T. Dunham (University of Washington) for details and discussion regarding their modeling results.
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Chakravarthi, S., Chidambaram, P.R., Machala, C. et al. Modeling of Diffusion and Activation of Low Energy Arsenic Implants in Silicon. MRS Online Proceedings Library 717, 37 (2002). https://doi.org/10.1557/PROC-717-C3.7