The temperature and incident light intensity dependences of open circuit voltage for hetero-and homojunction a-Si:H pin solar cells have been studied. The temperature coefficient of the open circuit voltage decreases from −2.40 to −2.67 mV/°C as the illumination intensity is decreased from 150 to 7mW/cm2 This is consistent with the empirically calculated open circuit voltages. The diode quality factor obtained under dark condition shows high values (1.6–3.0) and strong temperature dependence. On the other hand, the diode quality factor under illumination is less than 1.5 and shows slight temperature dependence. The results appear to be due to the long dielectric relaxation time compared with the carrier lifetime in the i-layer.
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Jang, J., Lee, C. Temperature and Light Intensity Dependences of Open Circuit Voltage in a-Si:H Pin Solar Cells. MRS Online Proceedings Library 70, 543–548 (1986). https://doi.org/10.1557/PROC-70-543