The Effects of Dopant Profiles on the Device Parapmetrs of p-i-n and n-i-p a-Si Solar Cells

Abstract

We have studied the effects of intrinsic layer dopant profiles on the open circuit voltage and fill factor of p-i-n and n-i-p solar cells. Data is presented showing that boron profiling into the i-layer is responsible for the commonly observed difference in open circuit voltage between p-i-n and n-i-p devices. As only a shallow profile is required to produce this effect, it is proposed that the lower Voc samples are being limited by surface recombination at the p/i interface and that the boron profile reduces this recombination current. The fill factor for devices illuminated through the n+ layer is shown to be very sensitive to the depth of a boron profile, yet not so sensitive to the profile concentration. A maximum occurs for a profile penetrating slightly more than half way through the cell. Spectral response data clearly shows a shifting of high collection from the back to the front of the cell.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    I. Sakata and Y. Hayashi, Appl. Phys. Lett., 42, 279 (1983)

    CAS  Article  Google Scholar 

  2. 2.

    M. Hack and M.S. Shur, J. Appl. Phys, 55, 12 (1984)

    Google Scholar 

  3. 3.

    T.J. McMahon and A. Madan, Mat. Res. Soc. Symp. Proc. 49, 287 (1985)

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to F. R. Jeffrey.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Jeffrey, F.R., Vernstrom, G.D., Weber, M. et al. The Effects of Dopant Profiles on the Device Parapmetrs of p-i-n and n-i-p a-Si Solar Cells. MRS Online Proceedings Library 70, 531–536 (1986). https://doi.org/10.1557/PROC-70-531

Download citation