Two types of amorphous silicon (a-Si:H)/silicon nitride (a-Si3N4:H) multilayers have been prepared either by turning-off the plasma at each step of individual layer growth (step by step deposition) or by quick gas switching without interrupting the plasma (continuous deposition). It is found that the continuous deposition causes a significant mixing of nitrogen into the a-Si:H well layers and deteriorates the compositional abruptness in the a-Si:H/a-Si3N4:H interface. Also, undesirable incorporation of nitrogen into the a-Si:H well layers tends to induce nonradiative recombination centers near the interface.
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Hirose, M., Murayama, N., Miyazaki, S. et al. Amorphous Silicon-Based Superlattices and their Potentials to Device Applications. MRS Online Proceedings Library 70, 405–414 (1986). https://doi.org/10.1557/PROC-70-405