The photosensitivity of a-Si:H/P+Pc-Si heterojunction

Abstract

We have investigated the photosensitivity of the a-Si:H/P+Pc-Si heterojunction. It has been found that the capacitance of a-Si:H/P+Pc-Si heterojunction have an excellent photosensitivity, and potential application as a photosensitive capacitors.

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References

  1. [1]

    R. L. Anderson, Solid-State Electron, 5, 341 (1962).

    CAS  Article  Google Scholar 

  2. [2]

    M. J. Hampshire and G. T. Wright, Br. J. Appl. Phys. 15, 1331 (1964).

    CAS  Article  Google Scholar 

  3. [3]

    A. R. Kiben and D. L. Feucht, Int. J. Electron, 20, 583 (1966).

    Article  Google Scholar 

  4. [4]

    W. Shockley, U.S. Patent 2, 569, 347 (1951).

  5. [5]

    R. H. Rediker, etc., Proc. IEEE 51, 218 (1963).

    Article  Google Scholar 

  6. [6]

    R. F. Rutz, Proc. IEEE 51, 470 (1963).

    Article  Google Scholar 

  7. [7]

    J. C. Marinace, IBM J. Res. Dev. 4, 280 (1960).

    CAS  Article  Google Scholar 

  8. [8]

    M. P. Ali etc., Physica Scripta 24, 399 (1981).

    CAS  Article  Google Scholar 

  9. [9]

    Hideharu Matsuura et al., J. Appl. Phys. 55, 4 (1984).

    Article  Google Scholar 

  10. [10]

    W. L. Wang, J. Electronics, 1, 117 (1985).

    Google Scholar 

Download references

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Correspondence to Wanlu Wang.

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Wang, W., Liao, K. The photosensitivity of a-Si:H/P+Pc-Si heterojunction. MRS Online Proceedings Library 70, 399–402 (1986). https://doi.org/10.1557/PROC-70-399

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