Abstract
Using in situ ellipsometry with a 3.4 eV probe, we have characterized the initial nucleation and interface structure of a-Si:H and μc-Si deposited on oxide/c-Si substrates. Multilayered a-Si:H/a-SiNx:H structures have also been studied and non-uniformities have been modeled. In none of the reported data could we model thin film growth with thickness independent optical functions. Once a film becomes opaque, ellipsometry is very sensitive to changes in the thickness of surface roughness layers. As a result, roughness on single and multilayered a-Si:H films has been studied as well as the renucleation that results from stopping and then restarting the a-Si:H growth plasma.
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Collins, R.W. In Situ Studies of the Microstructure of a-Si:H Surfaces and Interfaces. MRS Online Proceedings Library 70, 361–366 (1986). https://doi.org/10.1557/PROC-70-361
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DOI: https://doi.org/10.1557/PROC-70-361