Electronic Transport and the Density of States Distribution in a-(Si,Ge):H,F Alloys

Abstract

The electronic and optical properties of amorphous silicon-germanium alloys produced by d.c. and r.f. glow discharge are reported. Data on the sub-gap absorption, dark and photo conductivities, drift mobilities and drift mobility-lifetime products are used to propose a density of states model.

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Correspondence to S. Aljishi.

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Funded by the Electric Power Research Institute

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Aljishi, S., Smith, Z.E., Slobodin, D. et al. Electronic Transport and the Density of States Distribution in a-(Si,Ge):H,F Alloys. MRS Online Proceedings Library 70, 269–274 (1986). https://doi.org/10.1557/PROC-70-269

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