Frequency-Dependent Noise in Hydrogenated Amorphous Silicon

Abstract

Flicker noise, due to trapping and emission from states in the mobility gap, leads to a spectrum in which noise power is proportional to 1/fn. Experimentally we find 0.6 <n<1.1 for an Si:H film in an n+-i-n4 structure. Theoretical development allows the extended state electron mobility, and the density of states at the conduction band edge to be obtained. Similar measurements on Schottky diodes provide the distribution of the localized state density in the mobility gap.

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Correspondence to F. Z. Bathaei.

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Bathaei, F.Z., Anderson, J.C. Frequency-Dependent Noise in Hydrogenated Amorphous Silicon. MRS Online Proceedings Library 70, 197–201 (1986). https://doi.org/10.1557/PROC-70-197

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