Thickness Dependence of the Optical and Electrical Properties of Thin a-Si:H Films


Optical and electrical properties are investigated as a function of thickness for two sets of samples of a-Si:H films deposited respectively by RF magnetron sputtering and by RF glow discharge under the same conditions. The hydrogen concentration, the transmittance and reflectance spectra in the UV-visible-NIR and the resistivity were measured for both sets of samples. Relationships between index of refraction, absorption coefficient, imaginary part of the dielectric constant, optical band gap, resistivity and the thickness are found and interpreted. The thickness dependence of these parameters is related to the larger amount of inhomogeneities present in sputtered samples with respect to glow discharge samples.

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Correspondence to F. Demichelis.

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Demichelis, F., Mezzetti, E., Mpawenayo, P. et al. Thickness Dependence of the Optical and Electrical Properties of Thin a-Si:H Films. MRS Online Proceedings Library 70, 191–195 (1986).

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