Capacitance-Voltage Characteristics of Metallic Gate/Oxide/a-Si:H MOS Structures

Abstract

The density of states (DOS) has for the first time been calculated throughout the entire bandgap region of undoped amorphous silicon from quasi-static capacitance-voltage (QSCV) measurements using MOS structures. The QSCV DOS is compared with the DOS obtained by the field-effect method. It is shown, that the coexistence of states of a different nature at the same bandgap level can be revealed by the temperature dependence of low frequency MOS CV measurements.

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Correspondence to Ruud E. I. Schropp.

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Schropp, R.E.I., Snijder, J. & Verwey, J.F. Capacitance-Voltage Characteristics of Metallic Gate/Oxide/a-Si:H MOS Structures. MRS Online Proceedings Library 70, 167–172 (1986). https://doi.org/10.1557/PROC-70-167

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