A general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.
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Furlan, J., Amon, S. Analytical Determination of Generation-Recombination Rate in Amorphous Silicon. MRS Online Proceedings Library 70, 149–154 (1986). https://doi.org/10.1557/PROC-70-149