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Analytical Determination of Generation-Recombination Rate in Amorphous Silicon

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Abstract

A general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.

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Authors and Affiliations

  1. Fak. za elektro., University of Ljubljana, Tržaška 25, Ljubljana, Yugoslavia

    Jože Furlan & Slavko Amon

Authors
  1. Jože Furlan
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  2. Slavko Amon
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Furlan, J., Amon, S. Analytical Determination of Generation-Recombination Rate in Amorphous Silicon. MRS Online Proceedings Library 70, 149–154 (1986). https://doi.org/10.1557/PROC-70-149

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  • DOI: https://doi.org/10.1557/PROC-70-149

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