Analytical Determination of Generation-Recombination Rate in Amorphous Silicon


A general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.

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  1. 1.

    W. Shockley, W. T. Read, Phys. Rev., 87, 835 (1952).

    CAS  Article  Google Scholar 

  2. 2.

    M. H. Cohen, H. Fritzsche, S. R. Ovshinsky, Phys. Rev. Letters, 22, 1065 (1969).

    CAS  Article  Google Scholar 

  3. 3.

    W. E. Spear, P. G. LeComber, A. J. Snell, Phil. Mag., 38, 303 (1978).

    CAS  Article  Google Scholar 

  4. 4.

    G. W. Taylor, J. G. Simmons, J. Non-Crystalline Solids, 8–10, 940 (1972).

    Article  Google Scholar 

  5. 5.

    H. C. Card, I. Kato, L. Chow, H. Watanabe, K. C. Kao, Solar Ener. Mater., 6, 175 (1982).

    CAS  Article  Google Scholar 

  6. 6.

    A. Rose, Concepts in Photoconductivity and allied Problems, Interscience Publishers, 118 (1963).

  7. 7.

    M. Hack, M. Shur, IEEE Trans. Electron Devices, ED-31, 539 (1984).

    CAS  Article  Google Scholar 

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Correspondence to Jože Furlan.

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Furlan, J., Amon, S. Analytical Determination of Generation-Recombination Rate in Amorphous Silicon. MRS Online Proceedings Library 70, 149–154 (1986).

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