Contactless photoconductivity measurements with the time-resolved microwave conductivity technique have been performed during the growth of hydrogenated amorphous silicon films. it has been shown that low substrate temperature and thin films lead to a larger electron decay rate and to an increased infrared absorption compared with high quality films. Addition of H2S to SiH4 during the glow discharge process leads to a worse fi1m quality which can be detected in-situ.
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Werner, A., Kunst, M. Influence of Preparation Conditions on Charge Carrier Dynamics in a-Si:H Determined by an In-Situ Technique. MRS Online Proceedings Library 70, 137–142 (1986). https://doi.org/10.1557/PROC-70-137