Influence of Preparation Conditions on Charge Carrier Dynamics in a-Si:H Determined by an In-Situ Technique

MRS Online Proceedings Library volume 70, pages137–142(1986)Cite this article

Abstract

Contactless photoconductivity measurements with the time-resolved microwave conductivity technique have been performed during the growth of hydrogenated amorphous silicon films. it has been shown that low substrate temperature and thin films lead to a larger electron decay rate and to an increased infrared absorption compared with high quality films. Addition of H2S to SiH4 during the glow discharge process leads to a worse fi1m quality which can be detected in-situ.

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References

  1. [1]

    R.A. Street, J.C. Knights, D.K. Biegelsen, Phys. Rev. B 18, 1880 (1978)

    Article  Google Scholar 

  2. [2]

    G.D. Cody, B. Abeles, B. Brooks, P. Persans, L. Roxlo, A. Ruppert, C. Wronski, J. Non-Cryst. Solids 59, 60, 325 (1983)

    Article  Google Scholar 

  3. [3]

    W. Pries, R.D. McLoed, H.C. Card, K.C. Kao, Appl. Phys. Lett. 45, 734 (1984)

    CAS  Article  Google Scholar 

  4. [4]

    J. Tauc, Semiconductors and Semimetals vol. 21 B, Academic Press London, ed. by J.I. Pankove, p. 299 (1984)

    Google Scholar 

  5. [5]

    M. Kunst, A. Werne, J. Appl. Phys. 58, 2236 (1985)

    CAS  Article  Google Scholar 

  6. [6]

    T. Tiedje, J.M. Cebulka, D.L. Mosel, B. Abeles, Phys. Rev. Lett. 46, 1425 (1981)

    CAS  Article  Google Scholar 

  7. [7]

    A. Werner, M. Kunst, Appl. Phys. Lett. 46, 69 (1985)

    CAS  Article  Google Scholar 

  8. [8]

    G.D. Cody, ref. 4, p. 11

    Google Scholar 

Download references

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Affiliations

  1. Bereich Strahlenchemie, Hahn-Meitner-institut für Kernforschung Berlin, Glienicker Str. 100, D-1000, Berlin 39, Federal Republic of Germany

    A. Werner & M. Kunst

Authors
  1. A. Werner
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  2. M. Kunst
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Correspondence to A. Werner.

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Werner, A., Kunst, M. Influence of Preparation Conditions on Charge Carrier Dynamics in a-Si:H Determined by an In-Situ Technique. MRS Online Proceedings Library 70, 137–142 (1986). https://doi.org/10.1557/PROC-70-137

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