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Doping profiles of n-type GaAs layers grown on Si by the conformal method

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Abstract

We study doping profiles in selectively Si-doped GaAs layers grown by the conformal method. This growth technique allows to obtain GaAs/Si with optoelectronic quality. The samples are laterally grown, and selective doping with Si is carried out in such a way that doped stripes are intercalated with undoped ones. The study of the doping profiles was carried out by cathodoluminescence (CL) and micro-Raman (μR) spectroscopy. Abrupt doping profiles between doped and undoped stripes were demonstrated by monochromatic CL images. Deep level related CL bands can be observed between 1000 and 1400 nm, evidencing the complex mechanism for Si incorporation at the growth temperature (730 °C). Net doping concentrations and mobilities across the layers were determined from the analysis of the phonon-plasmon coupled modes in the μR spectra obtained with a lateral resolution better than 1 μm.

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Authors and Affiliations

  1. Depto. De Física, Facultad de Ciencias, Universidad Nacional de Colombia, Ciudad Universitaria, Santa Fe de Bogotá, Colombia

    Angel M. Ardila

  2. Física de la Materia Condensada, Facultad de Ciencias, Universidad de Valladolid, Valladolid, 47011, Spain

    Angel M. Ardila, O. Martínez, M. Avella & J. Jiménez

  3. THALES, Corporate Research Laboratory, 91404, Orsay Cedex, France

    B. Gérard

  4. LASMEA UMR CNRS 6602, Université Blaise Pascal, Les Cézeaux, 63177, Aubiére Cedex, France

    J. Napierala & E. Gil-Lafon

Authors
  1. Angel M. Ardila
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  2. O. Martínez
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  3. M. Avella
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  4. J. Jiménez
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  5. B. Gérard
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  6. J. Napierala
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  7. E. Gil-Lafon
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Ardila, A.M., Martínez, O., Avella, M. et al. Doping profiles of n-type GaAs layers grown on Si by the conformal method. MRS Online Proceedings Library 692, 941 (2001). https://doi.org/10.1557/PROC-692-H9.4.1

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  • DOI: https://doi.org/10.1557/PROC-692-H9.4.1

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