Abstract
AlxGa(1−x)As/GaAs quantum well lasers have been demonstrated via organometallic chemical vapor deposition (OMCVD) on relaxed graded GexSi(1−x) virtual substrates on Si. Despite unoptimized laser structures with high series resistance and large threshold current densities, surface threading dislocation densities as low as 2×106 cm−2 enabled cw room-temperature lasing at a wavelength of 858nm. The laser structures are oxide-stripe gain-guided devices with differential quantum efficiencies of 0.16 and threshold current densities of 1550A/cm2. Identical devices grown on commercial GaAs substrates showed differential quantum efficiencies of 0.14 and threshold current densities of 1700A/cm2. This comparative data agrees with our previous measurements of near-bulk minority carrier lifetimes in GaAs grown on Ge/GeSi/Si substrates. A number of GaAs/Ge/Si integration issues including thermal expansion mismatch and Ge autodoping behavior in GaAs were overcome.
Similar content being viewed by others
References
H. Kroemer, T.Y. Liu, and M. Petroff, Journal of Crystal Growth 95, 96 (1989).
Z. Hatzopoulos, D. Cengher, G. Deligeorgis, M. Androulidaki, E. Aperathitis, G. Halkias, A. Georgakilas, Journal of Crystal Growth 227–228, 193 (2001).
Z.I. Kazi, P. Thilakan, T. Egawa, M. Umeno, and T. Jimbo, Japanese Journal of Applied Physics 40 (8), 4903 (2001).
P.J. Taylor, W.A. Jesser, J.D. Benson, M. Martinka, J.H. Dinan, J. Bradshaw, M. Lara-Taysing, R.P. Leavitt, G. Simonis, W. Chang, W.W. Clark, and K.A. Bertness, Journal of Applied Physics 89 (8), 4365 (2001).
M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald, Applied Physics Letters 72 (14), 1718 (1998).
S. Ting, M. Bulsara, V. Yang, M. Groenert, S. Samavedam, M. Currie, T. Langdo, E. Fitzgerald, A. Joshi, R. Brown, X. Wang, R. Sieg, S. Ringel, presented at the SPIE Conference on Optoelectronics, San Jose, CA, 1999 (unpublished).
S.A. Ringel, J.A. Carlin, C.W. Leitz, M. Currie, T. Langdo, E.A. Fitzgerald, M. Bulsara, D.M. Wilt, and E.V. Clark, presented at the 16th European Photovoltaics Solar Energy Conference and Exhibition, Glasgow, Scotland, 2000 (unpublished).
G.R. Srinivasan, Journal of the Electrochemical Society 127 (6), 1334 (1980).
J.O. Carlsson, M. Boman, presented at the 9th International Conference on Chemical Vapor Deposition, Cincinnati, OH, 1984 (unpublished).
H. Kasano, Solid State Electronics 16, 913 (1973).
S. H. Yellen, A.H. Shepard, R.J. Dalby, J.A. Baumann, H.B. Serreze, T.S. Guido, R. Soltz, K.J. Bystrom, C.M. Harding, and R.G. Waters, IEEE Journal of Quantum Electronics 29 (6), 2058 (1993).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Groenert, M.E., Leitz, C.W., Pitera, A.J. et al. Strategies For Direct Monolithic Integration of AlxGa(1−x)As/InxGa(1−x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1−x) Buffer Layers. MRS Online Proceedings Library 692, 9301 (2001). https://doi.org/10.1557/PROC-692-H9.30.1
Published:
DOI: https://doi.org/10.1557/PROC-692-H9.30.1