Using pulsed laser deposition technique, nGaAs-nInSb heterojunctions (HJs) are obtained. Their electrical properties are studied. The Current-Voltage characteristics show that obtained HJs possess rectifying properties. The rectification coefficient depends strongly on the doping level of GaAs substrate. The linear dependence of C−2 (V) curve in Capacitance-Voltage characteristics, as well as the change of photo-response sign with wavelength, indicates that the HJs have abrupt interface, which is, to the best of our knowledge, a novel result for these HJ materials. The full number of interface states arising due to the lattice mismatch is determined which is in agreement with Hall measurements. Current-Voltage characteristics of obtained HJs are analogous to those of metal-semiconductor junction. Based on the obtained results the energy band diagrams of nGaAs-nInSb HJ is constructed taking into account the interface states.
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Avdjian, K.E. I-V And C-V Characteristics of nGaAs-nInSb Heterojunctions Obtained by Pulsed Laser Deposition Technique. MRS Online Proceedings Library 692, 9251 (2001). https://doi.org/10.1557/PROC-692-H9.25.1