High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

MRS Online Proceedings Library volume 692, Article number: 9171 (2001) Cite this article

Abstract

InAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and–0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 1010 cmHz1/2/W.

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References

  1. [1]

    V. Ryzhii, Sci. Technol. 11, 759 (1996)

    Google Scholar 

  2. [2]

    D. Pan, E. Towe, and S. Kennerly, Appl. Phys. Lett. 75, 2719 (1999).

    CAS  Article  Google Scholar 

  3. [3]

    S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen, and M. Razeghi, Appl. Phys. Lett. 73, 963 (1998).

    CAS  Article  Google Scholar 

  4. [4]

    J. Phillips, Pallab Bhattacharya, S.w. Kennerly, D.W. Beekman and M. Dutta, IEEE J. Quant. Electron. 35, 936 (1999).

    CAS  Article  Google Scholar 

  5. [5]

    Jong-Wook Kim Jae-Eung Oh, Seomg-Chul Hong, Chung-Hoon Park and Tae-Kyung Yoo, IEEE Electron Device Letter, 21, No. 7, 329 (2000).

    CAS  Article  Google Scholar 

  6. [6]

    O. Baklenov, Z.H. Chen, E.T. Kim, I. Mukhametzhanov, A. Madhukar, F. Ma, Z. Ye, B. Yang, and J. Campbell, the 58th IEEE Device Research Conference, (Denver, Colorado, June 19–21, 2000), p171; Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye, and J. Campbell, Proceeding of QWIP2000 Workshop, Dana Point, CA, July 2000, Infrared Physics & Technology, 42, 479 (2001)

    Google Scholar 

  7. [7]

    Z.H. Chen, O. Baklenov, E. T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye and J. C. Campbell, J. Appl. Phys. 89, 4558 (2001).

    CAS  Article  Google Scholar 

  8. [8]

    S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, Appl. Phys. Lett., 78, 1023 (2001).

    CAS  Article  Google Scholar 

  9. [9]

    Shih-Yen Lin, Yau-Ren Tsai, and Si-chen Lee, Appl. Phys. Lett., 78, 2784 (2001).

    CAS  Article  Google Scholar 

  10. [10]

    A.D. Stiff, S. Krishna, P. Bhattacharya, and S. Kennerly, Appl. Phys. Lett. 79, 421 (2001)

    CAS  Article  Google Scholar 

  11. [11]

    I. Mukhametzhanov, Z. Wei, A. Rheitz, and Madhukar, Appl. Phys. Lett., 75, 85 (1999).

    CAS  Article  Google Scholar 

  12. [12]

    I. Mukhametzhanov, Z.H. Chen, O. Baklenov, E.T. Kim, and A. Madhukar, Phys. Status Solidi (b) 224, 697 (2001)

    CAS  Article  Google Scholar 

Download references

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Affiliations

  1. Microelectronics Research Center, The University of Texas at Austin, 10,100 Burnet Rd., Bldg. 160, Austin, TX, 78758, USA

    Zhengmao Ye & Joe C. Campbell

  2. Departments of Materials Science and Physics University of Southern California, Los Angeles, CA, 90089-0241, USA

    Zhonghui Chen, O. Baklenov, E. T. Kim, I. Mukhametzhanov, J. Tie & A. Madhukar

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  1. Zhengmao Ye
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  2. Joe C. Campbell
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  3. Zhonghui Chen
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  4. O. Baklenov
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  5. E. T. Kim
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  6. I. Mukhametzhanov
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  7. J. Tie
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  8. A. Madhukar
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Correspondence to Zhengmao Ye.

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Ye, Z., Campbell, J.C., Chen, Z. et al. High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers. MRS Online Proceedings Library 692, 9171 (2001). https://doi.org/10.1557/PROC-692-H9.17.1

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