Novel AlGaAs/CaF2 SESAM Device for Ultrashort Pulse Generation

Abstract

A novel ultrabroadband AlGaAs/CaF2 semiconductor saturable absorber mirror (SESAM) covering nearly the entire Ti:sapphire gain spectrum is demonstrated. This device supports sub-10-fs pulse operation of a laser. In contrast to previous SESAMs of comparable bandwidth, our device can be monolithically grown by molecular beam epitaxy and requires no post-growth processing. GaAs is used as semiconductor saturable absorber material. The high defect concentration of the material is due to the lattice-mismatched growth on a fluoride surface with (111) orientation. With a time response of 1.2 ps for carrier trapping, a saturation fluence of 36 μJ/cm2 and a modulation depth of up to 2.2%, the GaAs saturable absorber is well-suited for all-optical switching in SESAM devices used for ultrashort pulse generation.

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References

  1. 1.

    U. Keller, D. A. B.Miller, G. D. Boyd, T. H. Chiu, J. F. Ferguson, and M. T. Asom, Opt. Lett. 17, 505 (1992).

    CAS  Article  Google Scholar 

  2. 2.

    U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, IEEE J. Sel. Top. Quantum Electron. 2, 435 (1996).

    CAS  Article  Google Scholar 

  3. 3.

    L. R. Brovelli, I. D. Jung, D. Kopf, M. Kamp, M. Moser, F. X. Kärtner, and U. Keller, Electron. Lett. 31, 287 (1995).

    CAS  Article  Google Scholar 

  4. 4.

    D. H. Sutter, G. Steinmeyer, L. Gallmann, N. Matuschek, F. Morier-Genoud, U. Keller, V. Scheuer, G. Angelow, and T. Tschudi, Opt. Lett. 24, 631 (1999).

    CAS  Article  Google Scholar 

  5. 5.

    S. Schön, M. Haiml, and U. Keller, Appl. Phys. Lett. 77, 782 (2000).

    Article  Google Scholar 

  6. 6.

    S. Schön, H. Zogg, and U. Keller, J. Cryst. Growth 201/202, 1020 (1999).

    Article  Google Scholar 

  7. 7.

    C. C. Desai, Surf. Technol. 14, 353 (1981).

    CAS  Article  Google Scholar 

  8. 8.

    S. Schön, M. Haiml, M. Achermann, and U. Keller, J. Vac. Sci. Technol. B 18, 1701 (2000).

    Article  Google Scholar 

  9. 9.

    U. Keller: in Nonlinear Optics in Semiconductors E. Garmire, and A. Kost, Eds. (Academic Press, Inc., Boston, 1999), 59, 211.

    CAS  Article  Google Scholar 

  10. 10.

    M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, R. C. Lutz, P. Specht, and E. R. Weber, Appl. Phys. Lett. 74, 3134 (1999).

    CAS  Article  Google Scholar 

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Correspondence to Silke Schön.

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Schön, S., Gallmann, L., Haiml, M. et al. Novel AlGaAs/CaF2 SESAM Device for Ultrashort Pulse Generation. MRS Online Proceedings Library 692, 771 (2001). https://doi.org/10.1557/PROC-692-H7.7.1

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