The ternary chalcopyrite semiconductor Cu(In/Ga)(Se/S)2 is currently used as an absorber layer in high efficiency thin film solar cells. In this study, various types of I-III-VI (I = Cu, III = Ga or In, VI = S or Se) thin films (CuGaS2, CuInS2 and CuInSe2) were prepared from a series of organometallic precursors, M[(S/Se)2CNMeR]n (M = Cu, In, Ga; R = alkyl) by aerosol-assisted chemical vapour deposition (AACVD). In contrast to the metal alkyl compounds, MR3 (M = In and Ga; R = alkyl), which are pyrophoric, the precursors are easy to synthesize by one-pot reactions and are air stable. The optimum growth temperature for the preparation of these films on glass substrates using aerosol-assisted chemical vapour deposition (AACVD) was found to be above 400 °C in terms of crystallinity, although deposition does occur at lower temperatures. The films have been characterised using XRPD, SEM and EDS. SEM analyses show all films are microcrystalline. XRPD results show evidence of the crystalline nature of theses films. The results of this comprehensive study are presented and discussed.
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O. Igarashi, J. Cryst. Growth 130, 343 (1993).
B. Sagnes, A. Salesse, M. C. Artaud, S. Duchemin, J. Bougnot and G. Bougnot, J. Cryst. Growth 124, 620 (1992).
F. Ouchin, P. Gallon, M. C. Artaud, J. Bougnot and S. Duchemin, Cryst. Res. Technol. 31, S513 (1996).
P. A. Jones, A. D. Jackson, P. D. Lickiss, R. D. Pilkington and R. D. Tomlinson, Thin Solid Films 238, 4 (1994).
S. Chichibu, Appl. Phys. Letter. 70, 1840 (1997).
R. Nomura, Y. Seki, K. Konishi and H. Matsuda, Appl, Organomet. Chem. 6, 685 (1992).
R. Nomura, Y. Seki and H. Matsuda, J. Mater. Chem. 2, 765 (1992).
J. A. Hollingsworth, A. F. Hepp and W. E. Buhro, Chem. Vap. Deposition 5, 105 (1999).
M. B. Hursthouse, M. A. Malik, M. Motevalli and P. O’Brien, J. Mater. Chem. 2, 949 (1992).
M. Motevalli, P. O’Brien, J. R. Walsh and I. M. Watson, Polyhedron 15, 2801 (1996),.
P. O’Brien, J. R. Walsh, I. M. Waston, L. Hart and S. R. P. Silva, J. Cryst. Growth 167, 133 (1996).
S. W. Haggata, M. A. Malik, M. Motevalli, P. O’Brien and J. C. Knowles, Chem. Mater. 7, 716 (1995).
M. R. Lazell, P. O’Brien, D. J. Otway and J. -H. Park, Chem. Mater. 11, 3430 (1999).
P. O’Brien, D. J. Otway and J. R Walsh, Chem. Vap. Deposition 3, 227 (1997).
P. O’Brien, D. J. Otway and J. -H. Park, Unpublished results.
J. McAleese, P. O’Brien and D. J. Otway, Chemical Vap. Deposition 4, 94 (1998).
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Afzaal, M., Crouch, D., O’Brien, P. et al. New Approach Towards The Deposition of I-III-VI Thin Films. MRS Online Proceedings Library 692, 681 (2001). https://doi.org/10.1557/PROC-692-H6.8.1