New Approach Towards The Deposition of I-III-VI Thin Films

Abstract

The ternary chalcopyrite semiconductor Cu(In/Ga)(Se/S)2 is currently used as an absorber layer in high efficiency thin film solar cells. In this study, various types of I-III-VI (I = Cu, III = Ga or In, VI = S or Se) thin films (CuGaS2, CuInS2 and CuInSe2) were prepared from a series of organometallic precursors, M[(S/Se)2CNMeR]n (M = Cu, In, Ga; R = alkyl) by aerosol-assisted chemical vapour deposition (AACVD). In contrast to the metal alkyl compounds, MR3 (M = In and Ga; R = alkyl), which are pyrophoric, the precursors are easy to synthesize by one-pot reactions and are air stable. The optimum growth temperature for the preparation of these films on glass substrates using aerosol-assisted chemical vapour deposition (AACVD) was found to be above 400 °C in terms of crystallinity, although deposition does occur at lower temperatures. The films have been characterised using XRPD, SEM and EDS. SEM analyses show all films are microcrystalline. XRPD results show evidence of the crystalline nature of theses films. The results of this comprehensive study are presented and discussed.

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References

  1. [1]

    O. Igarashi, J. Cryst. Growth 130, 343 (1993).

    CAS  Article  Google Scholar 

  2. [2]

    B. Sagnes, A. Salesse, M. C. Artaud, S. Duchemin, J. Bougnot and G. Bougnot, J. Cryst. Growth 124, 620 (1992).

    CAS  Article  Google Scholar 

  3. [3]

    F. Ouchin, P. Gallon, M. C. Artaud, J. Bougnot and S. Duchemin, Cryst. Res. Technol. 31, S513 (1996).

    Article  Google Scholar 

  4. [4]

    P. A. Jones, A. D. Jackson, P. D. Lickiss, R. D. Pilkington and R. D. Tomlinson, Thin Solid Films 238, 4 (1994).

    CAS  Article  Google Scholar 

  5. [5]

    S. Chichibu, Appl. Phys. Letter. 70, 1840 (1997).

    CAS  Article  Google Scholar 

  6. [6]

    R. Nomura, Y. Seki, K. Konishi and H. Matsuda, Appl, Organomet. Chem. 6, 685 (1992).

    CAS  Article  Google Scholar 

  7. [7]

    R. Nomura, Y. Seki and H. Matsuda, J. Mater. Chem. 2, 765 (1992).

    CAS  Article  Google Scholar 

  8. [8]

    J. A. Hollingsworth, A. F. Hepp and W. E. Buhro, Chem. Vap. Deposition 5, 105 (1999).

    CAS  Article  Google Scholar 

  9. [9]

    M. B. Hursthouse, M. A. Malik, M. Motevalli and P. O’Brien, J. Mater. Chem. 2, 949 (1992).

    CAS  Article  Google Scholar 

  10. [10]

    M. Motevalli, P. O’Brien, J. R. Walsh and I. M. Watson, Polyhedron 15, 2801 (1996),.

    CAS  Article  Google Scholar 

  11. [11]

    P. O’Brien, J. R. Walsh, I. M. Waston, L. Hart and S. R. P. Silva, J. Cryst. Growth 167, 133 (1996).

    Article  Google Scholar 

  12. [12]

    S. W. Haggata, M. A. Malik, M. Motevalli, P. O’Brien and J. C. Knowles, Chem. Mater. 7, 716 (1995).

    CAS  Article  Google Scholar 

  13. [13]

    M. R. Lazell, P. O’Brien, D. J. Otway and J. -H. Park, Chem. Mater. 11, 3430 (1999).

    CAS  Article  Google Scholar 

  14. [14]

    P. O’Brien, D. J. Otway and J. R Walsh, Chem. Vap. Deposition 3, 227 (1997).

    Article  Google Scholar 

  15. [15]

    P. O’Brien, D. J. Otway and J. -H. Park, Unpublished results.

  16. [16]

    J. McAleese, P. O’Brien and D. J. Otway, Chemical Vap. Deposition 4, 94 (1998).

    CAS  Article  Google Scholar 

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Correspondence to Mohammad Afzaal.

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Afzaal, M., Crouch, D., O’Brien, P. et al. New Approach Towards The Deposition of I-III-VI Thin Films. MRS Online Proceedings Library 692, 681 (2001). https://doi.org/10.1557/PROC-692-H6.8.1

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