Depth profiling for the amount of lattice damage using a Confocal Micro-Raman (CMR) spectrometer is demonstrated in this paper. Samples of n-type silicon carbide were implanted with 2 MeV He and O ions at both room temperature and 500 °C, and fluences between 1015 and 1017 ions/cm2. Post-implantation annealing at 1000 °C was also performed in order to study the damage evolution. Optical Absorption Spectrophotometry (OAS) was used for establishing the opacity (and therefore the probing depth) of the damaged layer to the 632.8 nm wavelength of the He-Ne laser used for CMR throughout this study. The methodology used and the results obtained are presented herein. Total dissipation of amorphous carbon islands was observed even at low annealing temperatures of the RT implanted samples, along with an increase in the size of the amorphous silicon islands.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
Labram User Manual, ISA Dilor-Jobin Yvon, 1999.
“Raman and Luminiscence Spectroscopy for Microelectronics”, Catalogue of Optical and Physical Parameters, “Nostradamus” Project SMT4-CT-95–2024, European Commission, 1998.
The Stopping and Ranges of Ions in Solids, J. F. Ziegler, J. P. Biersack, U. Littmark, Pergamon Press, 1985.
N. B. Colthup, L. H. Daly, S. E. Wiberley, “Introduction to Infrared and Raman Spectroscopy”, Third Edition, Academic Press, 1990.
Y. Tanaka, N. Kobayashi, H. Okumura, R. Suzuki, T. Ohdaira, M. Hasegawa, M. Ogura, S. Yoshida, H. Tanoue, “Electrical and Structural Properties of Al and B Implanted 4HSiC”, Materials Science Forum Vols. 338–342 (2000), Trans Tech Publications, pp. 909–912.
W. Puff, A. G. Balogh, P. Mascher, “Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing”, Materials Science Forum Vols. 338–342 (2000), Trans Tech Publications, pp. 965–968.
Handbook of Modern Ion Beam Materials Analysis, Material Research Society, 1995, Chapter 10, pp. 231–300.
P. D. Townsend, P. J. Chandler, L. Zhang, “Optical Effects of Ion Implantation”, Cambridge University Press, 1994, pp. 71–72
About this article
Cite this article
Muntele, I.C., Ila, D., Muntele, C.I. et al. Depth Profiling of SiC Lattice Damage Using Micro-Raman Spectroscopy. MRS Online Proceedings Library 692, 661 (2001). https://doi.org/10.1557/PROC-692-H6.6.1