Photo-Assisted MOVPE Growth of ZnMgS on (100) Si


This paper presents for the first time photo-assisted Metalorganic vapor phase epitaxial (MOVPE) growth of ZnMgS on Si (100) substrates. The growth was done using dimethylzinc (DMZn), bismethylcyclo-pentadienyl-magnesium ((MeCP)2Mg), and diethylsulfhide (DES) as zinc, magnesium, and sulfur precursors. Epitaxial characterization by X-ray Photoelectron Spectroscopy (XPS), and low - angle X-ray Diffraction (XRD) results are presented. Mg solid phase incorporation is estimated to vary from 0 to 60 percent. The epitaxial nature of the ZnMgS layers has been verified using the low-angle X-ray diffraction eliminating any interference from the Si substrate. It can be shown with this technique that the change in the ZnMgS peak position changes from 27.35 degrees to 26.5 degrees with an increase in Mg incorporation, compared with a Si control sample peak at 27.4 degrees. XRD results obtained have been verified with XPS data. Chlorine doping of the ZnMgS layer was also studied. Concentrations up to 3 × 1015 cm−3 were observed in the ZnMgS layer. Results of the n (ZnMgS:Cl)–p (Si) diodes fabricated are also presented.

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  1. 1.

    Washizuka A. Mikami. “A 14.4-in Diagonal High Contrast Multicolor Information EL Display with 640×128 Pixels.” IEICE TRANS. Electron. E81C (November 1998): pp. 1725–1732.

    Google Scholar 

  2. 2.

    F. Jain. “Electroluminescent Flat Panel Displays Using MOCVD Grown ZnS and Ternary Compounds for Enhanced Blue Emission.” Proposal, University of Connecticut. (1998).

    Google Scholar 

  3. 3.

    G.P. Crawford. “A Bright New Page in Portable Displays.” IEEE Spectrum. 37 (October 2000): pp. 40–46.

    Article  Google Scholar 

  4. 4.

    M.B. Spitzer, S.M. Vernon, and C.J. Keavney. “Passivation Techniques for Silicon Solar Cells.”

  5. 5.

    G. Landis, J. Loferski, R. Beaulier, P. Sekula-Moisé, S. Vernon, M. Spitzer, and C. Keavney. “Wide-Bandgap Epitaxial Heterojunction Windows for Silicon Solar Cells.” IEEE Transactions on Electron Devices. 37 (February 1990): pp. 372–380.

    CAS  Article  Google Scholar 

  6. 6.

    P. Smith. “Preparation and characterization of ZnS thin films produced by metalorganic chemical vapor deposition.” J. Vac. Sci. Technol.. A7 (May/June 1989): pp. 1451–1455.

    Article  Google Scholar 

  7. 7.

    T. Yokogawa, H. Sato, and M. Ogura. “Growth of ZnSe/ZnS strained-layer superlattices on Si substrates.” Journal of Applied Physics. 64 (November 1988): pp. 5201–5205.

    CAS  Article  Google Scholar 

  8. 8.

    P. Rai-Choudhury, and A.J. Noreika. “Hydrogen Sulfide as an Etchant for Silicon.” Journal of the Electrochemical Society: Electrochemical Technology. 116 (April 1969): pp. 539–541.

    CAS  Article  Google Scholar 

  9. 9.

    L.F. Lou, and W.H. Frye. “Hall effect and resistivity in liquid-phase-epitaxial layers of HgCdTe.” Journal of Applied Physics. 56 (October 1984): pp. 2253–2267.

    CAS  Article  Google Scholar 

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Correspondence to Angel Rodriguez.

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Rodriguez, A., Shattuck, J., Zhang, X. et al. Photo-Assisted MOVPE Growth of ZnMgS on (100) Si. MRS Online Proceedings Library 692, 1121 (2001).

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