Ion implantation induced intermixing of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Energy shifts were found to be linear as a function of dose for doses as high as ∼5×1016 cm−2. Proton implantation and subsequent rapid thermal annealing was used to tune the emission wavelength of InGaAs quantum well lasers as well as detection wavelength of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs). Emission wavelength of lasers showed blue shift whereas detection wavelength of QWIPs was red shifted with intermixing.
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Fu, L., Tan, H.H., Cohen, M.I. et al. Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration. MRS Online Proceedings Library 692, 1061 (2001). https://doi.org/10.1557/PROC-692-H10.6.1