Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration

MRS Online Proceedings Library volume 692, Article number: 1061 (2001) Cite this article

Abstract

Ion implantation induced intermixing of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Energy shifts were found to be linear as a function of dose for doses as high as ∼5×1016 cm−2. Proton implantation and subsequent rapid thermal annealing was used to tune the emission wavelength of InGaAs quantum well lasers as well as detection wavelength of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs). Emission wavelength of lasers showed blue shift whereas detection wavelength of QWIPs was red shifted with intermixing.

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Affiliations

  1. Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia

    L. Fu, H. H. Tan, M. I. Cohen & C. Jagadish

  2. School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia

    L. V. Dao & M. Gal

  3. Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, China

    Na Li, Ning Li, X. Liu, W. Lu & S. C. Shen

Authors
  1. L. Fu
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  2. H. H. Tan
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  3. M. I. Cohen
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  4. C. Jagadish
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  5. L. V. Dao
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  6. M. Gal
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  7. Na Li
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  8. Ning Li
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  9. X. Liu
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  10. W. Lu
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  11. S. C. Shen
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Correspondence to L. Fu.

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Fu, L., Tan, H.H., Cohen, M.I. et al. Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration. MRS Online Proceedings Library 692, 1061 (2001). https://doi.org/10.1557/PROC-692-H10.6.1

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