Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration

Abstract

Ion implantation induced intermixing of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Energy shifts were found to be linear as a function of dose for doses as high as ∼5×1016 cm−2. Proton implantation and subsequent rapid thermal annealing was used to tune the emission wavelength of InGaAs quantum well lasers as well as detection wavelength of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs). Emission wavelength of lasers showed blue shift whereas detection wavelength of QWIPs was red shifted with intermixing.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    D.G. Deppe and N. Holonyak, Jr, J. Appl. Phys., 64, R93 (1988).

    CAS  Article  Google Scholar 

  2. 2.

    E.H. Li, Ed. Quantum Well Intermixing for Photonics, SPIE Milestone Series, Bellingham, WA, 1997

    Google Scholar 

  3. 3.

    E.H. Li, Ed. Semiconductor Quantum Well Intermixing, Gordon and Breach, Amsterdam, 2000

    Google Scholar 

  4. 4.

    Shu Yuan, C. Jagadish, Yong Kim, Y. Chang, H. H. Tan, R. M. Cohen, M. Petravic, L. V. Dao, M. Gal, M. C. Y. Chan, E. H. Li, J. S. O, and P. S. Zory, IEEE Journal of Special Topics in Quantum Electronics 4, 629–635 (1998).

    CAS  Article  Google Scholar 

  5. 5.

    P.N.K. Deenapanray, H.H. Tan, M.I. Cohen, K. Gaff, M. Petravic and C. Jagadish, J. ElectroChem. Soc. 147, 1950–1956 (2000).

    CAS  Article  Google Scholar 

  6. 6.

    P.N.K. Deenapanray and C. Jagadish, J. Vac. Sci. Technol. B 19, 1962–1966 (2001).

    CAS  Article  Google Scholar 

  7. 7.

    L. Fu, P.N.K. Deenapanray, H.H. Tan, C. Jagadish, L.V. Dao and M. Gal, Appl. Phys. Lett. 76, 837–839 (2000).

    CAS  Article  Google Scholar 

  8. 8.

    R.M. Cohen, G. Li, C. Jagadish, P.T. Burke and M. Gal, Appl. Phys. Lett. 73, 803–805 (1998).

    CAS  Article  Google Scholar 

  9. 9.

    P.N.K. Deenapanray, H.H. Tan, C. Jagadish and F.D. Auret, Appl. Phys. Lett. 77, 696–698 (2000).

    CAS  Article  Google Scholar 

  10. 10.

    C. Jagadish, H.H. Tan, S. Yuan and M. Gal, Mater. Res. Soc. Symp. Proc. 484, 397–411 (1998).

    CAS  Article  Google Scholar 

  11. 11.

    H.H. Tan, J.S. Williams, C. Jagadish, P.T. Burke and M. Gal, Appl. Phys. Lett. 68, 2401–2403 (1996).

    CAS  Article  Google Scholar 

  12. 12.

    Y. Kim, S. Yuan, R. Leon, C. Jagadish, M. Gal, M.B. Johnston, M.R. Phillips, M.A. Stevens Kalceff, J. Zou and D.J.H. Cockayne, J. Appl. Phys. 80, 5014–5020 (1996).

    CAS  Article  Google Scholar 

  13. 13.

    H.H. Tan, J.S. Williams, C. Jagadish, A. Skirowski, Z. Jin and D.J.H. Cockayne, J. Appl. Phys. 77, 87–94 (1995).

    CAS  Article  Google Scholar 

  14. 14.

    H.H. Tan, C. Jagadish, J.S. Williams, Z. Jin, D.J.H. Cockayne and A. Skirowski, J. Appl. Phys. 80, 2691–2701 (1996).

    CAS  Article  Google Scholar 

  15. 15.

    L. Fu, H. H. Tan, C. Jagadish, Na Li, Ning Li, X. Q. Liu, W. Lu, and S. C. Shen, Appl. Phys. Lett. 78, 10–12 (2001).

    CAS  Article  Google Scholar 

  16. 16.

    L. Fu, H.H. Tan, C. Jagadish, Na Li, N. Li, X. Liu, W. Lu and S.C. Shen, Infrared Phys. & Technol. 42, 171–175 (2001).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to L. Fu.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Fu, L., Tan, H.H., Cohen, M.I. et al. Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration. MRS Online Proceedings Library 692, 1061 (2001). https://doi.org/10.1557/PROC-692-H10.6.1

Download citation