An investigation of the physical mechanisms governing the response of III-V based solar cells to particle irradiation is presented. The effect of particle irradiation on single and multijunction solar cells is studied through current vs. voltage, spectral response, and deep level transient spectroscopy measurements. The basic radiation response mechanisms are identified, and their effects on the solar cell electrical performance are described. In particular, a detailed analysis of multijunction InxGa1-xP/InyGa1-yAs/Ge devices is presented. The MJ cell response is found to be more strongly affected by the internal cell structure than by the In content.
R.R. King, N.H. Karma, J.H. Ermer, M. Haddad, P. Colter, T. Isshiki, H. Ion, H.L. Cotal, D.E. Joslin, D.D. Krut, R. Sudharsanan, K. Edmondson, B.T. Cavicchi, and D.R. Lillington, “Next-Generation, High-Efficiency III-V Multijunction Solar Cells”, Proceedings of the 28th Photovoltaic Specialists Conference, Anchorage, AK, September, 2000, p. 998.
S.R. Messenger, E.A. Burke, G.P. Summers, M.A. Xapsos, R.J. Walters, E.M. Jackson, and B.D. Weaver, “Nonionizing Energy Loss (NIEL) for Heavy Ions”, IEEE Transactions on Nuclear Science 46, 1595 (1999).
R.J. Walters and G.P. Summers, “Deep Level Transient Spectroscopy Study of Proton-Irradiated p-Type InP”, J. Appl. Phys. 69, 6488 (1990).
H.Y. Tada, J.R. Carter Jr, B.E. Anspaugh, and R.G. Downing, Solar Cell Radiation Handbook, 3rd Edition, JPL Publication 82–69, 1982.
G.P. Summers, E.A. Burke, and M.A. Xapsos, “Displacement Damage Analogs to Ionizing Radiation Effects”, Radiation Measurements, 24, 1 (1995)
S.R. Messenger, E.M. Jackson, E.A. Burke, R.J. Walters, M.A. Xapsos, and G.P. Summers, “Structural Changes in InP/Si Solar Cells Following Irradiation with protons to Very High Fluences”, J. Appl. Phys. 86, 1230 (1999).
See product literature from the three major US multijunction cell vendors at www.spectrolab.com,www.emcore.com,andwww.tecstar.com.
J.M. Olson, J.F. Geisz, S.R. Kurtz, and A.G. Norman, “1-eV semiconductors for multijunction solar cells”, this conference.
S.R. Messenger, R.J. Walters, G.P. Summers, A.W. Bett, F. Dimroth, C. Baur, M. Meusel, T. Takamoto, T. Agui, M. Imaizumi, and S. Matsuda, “Radiation Response Analysis of Triple Junction InGaP/InGaAs/Ge Solar Cells”, Proceedings of the 17th European Photovoltaic Science and Engineering Conference, Munich, Germany, October, 2001.
J.A. Carlin, S.A. Ringel, and E.A. Fitzgerald, “Impact of GaAs Buffer Thickness on Electronic Quality of GaAs Grown on Graded Ge/GeSi/Si Substrates”, Appl. Phys. Lett. 76, 1884 (2000).
D. C. Marvin, Aerospace Report: TOR-00(1210)1
B. E. Anspaugh, Proc. 22nd IEEE Photovoltaic Specialist Conference, Las Vegas, NV, Oct. 1991, p. 1593
R.J. Walters, S.R. Messenger, G.P. Summers, A.W. Bett, F. Dimroth, R.W. Hoffman Jr, M.A. Stan, T. Takamoto, E. Ikeda, M. Imaizumi, O. Anzawa, and S. Matuda, “Radiation Response of GaxIn1-xAs Solar Cells”, Proceedings of the 16th European Photovoltaic Science and Engineering Conference, Glasgow, United Kingdom, May, 2000.
F. Dimroth, A.W. Bett, R.J. Waletrs, G.P. Summers, S.R. Messenger, T. Takamoto, E. Ikeda, M. Imaizumi, O. Anzawa, and S. Matsuda, “Radiation Response of Dual-Junction GayIn1-yP/Ga1-xInxAs Solar Cells”, Proceedings of the 28th Photovoltaic Specialists Conference, Anchorage, AK, September, 2000, p. 1110
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Walters, R.J., Summers, G.P. & Messenger, S.R. Space Radiation Effects in Advanced Solar Cell Materials and Devices. MRS Online Proceedings Library 692, 1021 (2001). https://doi.org/10.1557/PROC-692-H10.2.1