Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition

MRS Online Proceedings Library volume 692, Article number: 191 (2001) Cite this article

Abstract

The incorporation of a high percentage of nitrogen in the GaAs lattice has been the subject of recent interest to reduce the bandgap while maintaining the nearly lattice matched condition to GaAs. We will report on the metalorganic chemical vapor deposition (MOCVD) of GaAsN using trimethylgallium (TMG), tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy) organometallic sources in a hydrogen-free carrier gas. A nitrogen concentration as high as ∼8% in GaAsN was achieved. The effect of nitrogen concentration on the structural, optical and surface properties of GaAsN films will be discussed.

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Affiliations

  1. Dept. of Electrical & Computer Engineering, N. C. State University, Campus Box 7911, Raleigh, N. C., 27695-7911, USA

    J. C. Roberts, M. E. Aumer, S. F. LeBoeuf, J. M. Luther & S. M. Bedair

  2. Dept. of Materials Science and Engineering, N. C. State University, Campus Box 7907, Raleigh, N. C., 27695-7907, USA

    B. F. Moody & P. Barletta

Authors
  1. J. C. Roberts
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  2. B. F. Moody
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  3. P. Barletta
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  4. M. E. Aumer
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  5. S. F. LeBoeuf
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  6. J. M. Luther
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  7. S. M. Bedair
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Correspondence to J. C. Roberts.

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Roberts, J.C., Moody, B.F., Barletta, P. et al. Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition. MRS Online Proceedings Library 692, 191 (2001). https://doi.org/10.1557/PROC-692-H1.9.1

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