TlInGaAs/InP double-hetero (DH) structures were grown on (100) InP substrates by gas source MBE. The photoluminescence (PL) peak energy variation with temperature decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (−0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). TlInGaAs/InP light emitting diodes with 6% Tl composition were fabricated and the small temperature variation of the electroluminescence peak energy (−0.09 meV/K) was observed at the wavelength around 1.58 μm. The results are promising to realize the temperature-independent wavelength laser diodes, which are important in the wavelength division multiplexing (WDM) optical fiber communication systems.
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Asahi, H., Lee, HJ., Mizobata, A. et al. Gas Source MBE Growth and Characterization of TlInGaAs/InP DH Structures for Temperature-independent Wavelength LD Application. MRS Online Proceedings Library 692, 9271 (2001). https://doi.org/10.1557/PROC-692-H.9.27.1