Circular Photogalvanic Effect in SiGe Semiconductor Quantum Wells

Abstract

The photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiGe based quantum well (QW) structures due to their built-in asymmetry. We report on observations of the circular and linear photogalvanic effects induced by infrared radiation in (001)-and (113)-orientedp-Si/Si1-xGex QW structures and analyse these observations in view of the possible symmetry of these structures. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs with band splitting in k-space which results in a directed motion of free carriers in the plane of the QW. We discuss possible mechanisms that give rise to spin-splitting of the electronic subband states for different symmetries.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).

    CAS  Article  Google Scholar 

  2. 2.

    S.D. Ganichev, H. Ketterl, W. Prettl, E.L. Ivchenko, and L.E. Vorobjev, Appl. Phys. Lett. 77, 3146 (2000).

    CAS  Article  Google Scholar 

  3. 3.

    S.D. Ganichev, E.L. Ivchenko, S.N. Danilov, J. Eroms, W. Wegscheider, D. Weiss, and W. Prettl, Phys. Rev. Lett. 86, 4358 (2001).

    CAS  Article  Google Scholar 

  4. 4.

    E.L. Ivchenko and G.E. Pikus, Superlattices and Other Heterostructures. Symmetry and Optical Phenomena, Springer Series in Solid State Sciences, vol.110, Springer-Verlag, 1995; second edition 1997; Ch. 10.

  5. 5.

    S.D. Ganichev, Physica B 273-274, 737 (1999).

    CAS  Article  Google Scholar 

  6. 6.

    D.J. Bottomley, H.M. Van Driel, and J.-M. Baribeau, ( Proc. 22nd ICPS,World Scientific, Singapore, 1994) pp. 1572.

    Google Scholar 

  7. 7.

    M. Seto, M. Helm, Z. Moussa, P. Boucaud, F.H. Julien, J.M. Lourtioz, J.F. Nützel, and G. Abstreiter, Appl. Phys. Lett. 65, 2969 (1994).

    CAS  Article  Google Scholar 

  8. 8.

    D.J. Bottomley, H. Omi, and T. Ogino, J. Crysal Growth 225, 16 (2001).

    CAS  Article  Google Scholar 

  9. 9.

    S.D. Ganichev, E. L. Ivchenko, and W. Prettl, Physica E, in press

  10. 10.

    Yu.L. Bychkov and E.I. Rashba, J. Phys. C 17, 6039 (1984).

    Article  Google Scholar 

  11. 11.

    R. Winkler, Phys. Rev. B 62, 4245 (2000).

    CAS  Article  Google Scholar 

  12. 12.

    G.L. Bir and G.E. Pikus, Symmetry and Strain-induced Effects in Semiconductors (Wiley, New York 1974).

    Google Scholar 

  13. 13.

    E.L. Ivchenko, A.Yu. Kaminski, and U. Rössler, Phys. Rev. B 54, 5852 (1996).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Sergey D. Ganichev.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Ganichev, S.D., Kalz, FP., Rössler, U. et al. Circular Photogalvanic Effect in SiGe Semiconductor Quantum Wells. MRS Online Proceedings Library 690, F3.11 (2001). https://doi.org/10.1557/PROC-690-F3.11

Download citation