Thin Film Superconducting MgB2 Grown by MBE without Post-Anneal

Abstract

We report the synthesis of superconducting MgB2 thin films grown in-situ by molecular beam epitaxy (MBE). Mg-rich fluxes are deposited with B-flux by electron beam evaporation onto c- and r-plane sapphire substrates. Deposition temperature is varied between 260 ~ 320 °C. Base pressure of the MBE chamber is at low 10-10 Torr, rising to 10-8 Torr during deposition due mostly to the presence of hydrogen and nitrogen. Asgrown MgB2 films show superconducting transition at ~ 34 K with ΔTc < 1 K. The films on c-plane sapphire substrates exhibit c-axis oriented peaks of MgB2, and full-width at half maximum of 3 degree in their rocking curves. Azimuthal phi-scan of the MgB2(101) peak shows 12-fold symmetric peaks, which is confirmed by selected area diffraction pattern in transmission electron microscopy (TEM). Plan-view TEM shows hexagonal-shaped grain growth with grain size of about 400 Å.

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Correspondence to William Jo.

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Jo, W., Huh, JU., Ohnishi, T. et al. Thin Film Superconducting MgB2 Grown by MBE without Post-Anneal. MRS Online Proceedings Library 689, 108 (2001). https://doi.org/10.1557/PROC-689-E10.8

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