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A Novel Poly-Si TFT in Line-Crossover with High Aperture Ratio and Small Signal Delay of AMLCD Panel

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Abstract

We have proposed and fabricated a novel poly-Si TFT that is integrated into the gate-data line-crossover in order to increase aperture ratio and to decrease signal delay of AMLCD panel and electrical characteristics of TFT integrated into gate-data line-crossover almost are identical to conventional TFT. The aperture ratio of AMLCD panel was increased considerably because the TFT was located under the opaque metal line. We employed a low dielectric air-gap between the gate-data line crossover, which reduced a capacitance between the gate and data lines so that the RC signal delay of the data line is decreased significantly. Our experimental result shows that the fabricated TFT was successfully operated and the proposed structure found to reduce the RC signal delay has been reduced by factor of 9 compared with conventional AMLCD panel that employs SiO2 for insulator between gate and data lines.

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References

  1. R. E. Proano, R. S. Misage, D. Jones, and D. G. Ast, “Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors,” IEEE Trans. Electron Devices. 38, 1781 (1991).

    Article  CAS  Google Scholar 

  2. E. G. Colgan et al, “A 10.5-in.-diagonal SXGA active-matrix display,” IBM Journal of Research and Development’ 98. 42, 427 (1998).

    Article  Google Scholar 

  3. M. Azami et al “A 2.6-in. DTV TFT-LCD with Area-Reduced Integrated 8-bit Digital Data Drivers Using 400-Mobility CGS Technology,” SID ‘99 Digest, 6 (1999).

  4. M. Akiyama et al “A Low-Power Image-Memory AMLCD Using Ferroelectric Film with Gray-Scale Capability,” SID ‘99 Digest, 10 (1999).

  5. T. Shinomiya, M. Kawabata, N. Nagae, Y. Izumi, K. Fujimori, S. Fujiwata, M. Shiota, Y. Ishii, and F. Funada, “A 40-inch diagonal direct view TFT-LCD by seamless connection technique,” SID’ 97 Digest, 497 (1997).

  6. J. S. Yoo, C. H. Kim, K. Y. Choi, K. C. Park, and M. K. Han, “Fabrication of Low-Temperature Dual Gate Poly-Si TFT for High Aperture Ratio AMLCD,” IDW’ 97 Digest, 877 (1997).

  7. K. Suzuki, “Pixel Design of TFT-LCDs for High Quality Images,” SID’ 92 Digest, 39 (1992).

  8. C. M. Park, J. H. Kang and M. K. Han, “A novel air-bridge type gate-data-line crossover to reduce signal delay for large size AMLCDs”, SID ‘99 Digest, 18 (1999).

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Park, JW., Song, IH., Park, KC. et al. A Novel Poly-Si TFT in Line-Crossover with High Aperture Ratio and Small Signal Delay of AMLCD Panel. MRS Online Proceedings Library 685, 5231 (2001). https://doi.org/10.1557/PROC-685-D5.23.1

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  • DOI: https://doi.org/10.1557/PROC-685-D5.23.1

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