Nano Crystalline Silicon Film Serves as the Emission Material for the Field Emission Pressure Sensor

MRS Online Proceedings Library volume 685, Article number: 1741 (2001) Cite this article

Abstract

The prototype of a field-emission pressure sensor with a novel structure based on the quantum tunnel effect is designed and manufactured. Moreover the nano crystalline silicon film technology is introduced into the fabrication of the device effectively, which performs the function mostly as the field-emission material, the device field-emission characteristic of the nano silicon film is investigated, the experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5A/m2, when the exterior electric field is 5.6×105V/m.

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References

  1. 1.

    H. C. Lee, Transducers 91:6th Int. Conf. on Solid State Sensors and Actuators. San Francisco, 8 1991, 241

    Google Scholar 

  2. 2.

    J.C. Jiang, Transducers 91:6th Int. Conf. on Solid State Sensors and Actuators. San Francisco, CA, 1991, 238

    Google Scholar 

  3. 3.

    H. H. Busta, J.Micromech. Microeng., 3, 49(1993)

    Article  Google Scholar 

  4. 4.

    D. Nicolaescu, Appl.Surf.Sci., 87/88, 61(1995)

    CAS  Article  Google Scholar 

  5. 5.

    S. H. Xia, J.Vac.Sci.Technol.B, 16(3), 1226(1998)

    CAS  Article  Google Scholar 

  6. 6.

    B. Liao, H. Y. Lin, Y. Wan, Vacuum Science and Technology, 20(6), 413(2000)

    CAS  Google Scholar 

  7. 7.

    C. Wang, A. Gracia, D.C. Ingram, Electron.Lett. 27, 1459(1991)

    CAS  Article  Google Scholar 

  8. 8.

    K. Okano, T. Yamada, Appl.Phys.Lett. 70, 2201(1997)

    CAS  Article  Google Scholar 

  9. 9.

    G.A.J. Amaratunga and S.R.P. Silva, Appl.Phys.Lett. 68, 2529(1996)

    CAS  Article  Google Scholar 

  10. 10.

    N. Missert, T.A. Friedmann, Appl.Phys.Lett. 70, 1995(1997)

    CAS  Article  Google Scholar 

  11. 11.

    F. Charbonnier, J.Vac.Sci.Technol., 16, 880(1998)

    CAS  Article  Google Scholar 

  12. 12.

    J. J. Hickman, G L. Bergeron, Technical Digest 5th Int. Vacuum Microelectronics Conf., Vienna, Austris, 108(1992)

    Google Scholar 

  13. 13.

    J.R. Jessing, H R Kim et al, J.Vac.Sci.Technol. B16(2), 777–779(1998)

    Article  Google Scholar 

  14. 14.

    J.R. Jessing, D.L. Parker et al, J.Vac.Sci.Technol.B 14, 1899(1996)

    CAS  Article  Google Scholar 

  15. 15.

    J-M Bonard, J-P Salvetat, Appl.Phys.Lett. 73, 918(1998)

    CAS  Article  Google Scholar 

  16. 16.

    A. Kenneth, Dean and Babu R. Chalamala, Appl.Phys.Lett. 76(3), 375–377(2000)

    Article  Google Scholar 

  17. 17.

    C.K.Au Frederick, K.W. Wong, Y.H. Tang, Appl.Phys.Lett., 75(12), 1700–1702 1999

    Article  Google Scholar 

  18. 18.

    K.W. Wong, X.T. Zhou, Appl.Phys.Lett. 75(19), 2919(1999)

    Article  Google Scholar 

  19. 19.

    B. Liao, J.B. Han, Progress in nature science, 2, 1 (2001)

    Google Scholar 

Download references

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  1. Electronics Engineering Depart., Beijing Institute of Technology, Beijing, 100081, China

    Liao Bo

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  1. Liao Bo
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Correspondence to Liao Bo.

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Bo, L. Nano Crystalline Silicon Film Serves as the Emission Material for the Field Emission Pressure Sensor. MRS Online Proceedings Library 685, 1741 (2001). https://doi.org/10.1557/PROC-685-D17.4.1

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