Fabrication and Characterization of Poly-Si Schottky-Barrier Thin-Film Transistors


Poly-Si Schottky-barrier thin-film transistors (SB-TFTs) were fabricated and characterized. In this study, SB-TFTs were first fabricated by using a conventional sidewall spacer to isolate the gate and S/D regions during salicidation. However, it was found that these SB-TFTs depict very poor on/off current ratio (<103) as well as severe GIDL (gate-induced drain leakage)-like leakage current. To overcome these shortcomings, a novel SB-TFT structure is also fabricated in this study to improve the device performance. The new device consists of a field-induced-drain region (FID), which is an offset drain region controlled by a metal field-plate lying on top of the passivation oxide. The FID region is sandwiched between the silicided drain and the active channel region. Carrier types and the conductivity of the transistor are controlled by the metal field-plate. Since the metal field plate is formed simultaneously with the regular metal patterning, no additional processing steps are required. Our results show that the new device can significantly improve the on/off current ratio to over 106 for both p- and n-channel operations, while effectively eliminating the GIDL-like leakage.

This is a preview of subscription content, access via your institution.


  1. 1

    T. Lepselter and S. M. Sze, Proc. of IEEE, 1400-1401 (1968)

  2. 2.

    J. R. Tucker, C. Wang, and P. A. Carney, Appl. Phys. Lett., 65, 618 (1994).

    CAS  Article  Google Scholar 

  3. 3.

    W. Saitoh, A. Itoh, S. Yamagami, and M. Asada., Jpn. J. Appl. Phys., 38, 6226, (1999).

    CAS  Article  Google Scholar 

  4. 4.

    M. Nishisaka, Y. Ochiai, and T. Asano, in Proc. Device Res. Conf. (DRC), 1998, pp. 74–75.

    Google Scholar 

  5. 5.

    C. Wang, J. P. Snyder, and J. R. Tucker, Appl. Phys. Lett., 74, 1174 (1999).

    CAS  Article  Google Scholar 

  6. 6.

    A. Itoh, M. Saitoh, and M. Asada, Jpn. J. Appl. Phys. (Part I), 39, 4757 (2000).

    CAS  Article  Google Scholar 

  7. 7.

    H. C. Lin, C. Y. Lin, K. L. Yeh, R. G. Huang, M. F. Wang, C. M. Yu, T. Y. Huang, and S. M. Sze, in International Electron Device Meeting (IEDM) Tech. Dig., 2000, pp. 857–859,.

    Google Scholar 

  8. 8.

    T. Y. Huang, I.W. Wu, A. G. Lewis, A. Chiang, R. H. Bruce, IEEE Electron Device Lett., 11, 244 (1990).

    CAS  Article  Google Scholar 

  9. 9.

    T. Y. Huang, I.W. Wu, A. G. Lewis, A. Chiang, R. H. Bruce, IEEE Electron Device Lett., 11, 541(1990).

    Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to Horng-Chih Lin.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Lin, HC., Huang, TY., Yeh, KL. et al. Fabrication and Characterization of Poly-Si Schottky-Barrier Thin-Film Transistors. MRS Online Proceedings Library 685, 1251 (2001). https://doi.org/10.1557/PROC-685-D12.5.1

Download citation