Effect of Excimer Laser Annealing on Ultra-low Temperature Gate Dielectrics

Abstract

The effect of excimer laser annealing on the properties of ultra-low temperature (150°C) plasma enhanced chemical vapor deposited (PECVD) oxides was investigated. Annealing was performed using a 308 nm excimer laser incident directly on the oxides, at fluences up to the melting of the silicon and for as many as 3000 pulses. Following multiple shot irradiations below the silicon melt threshold, the CV threshold voltage was observed to decrease by ≍15V volts, coupled with an increase in the slope near threshold. Leakage currents measured by IV were not significantly changed. Property modifications are shown to be comparable to a 450°C thermal soak anneal. These results suggest that excimer laser annealing has potential to improve ultra-low temperature gate dielectrics for poly-Si Thin Film Transistors (TFTs) on plastic substrates.

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References

  1. 1.

    N. D. Young, G. Harkin, R. M. Bunn, D. J. McCulloch, R. W. Wilks, and A. G. Knapp, IEEE Electron Device Letters. 18, 19–20 (1997)

    Article  Google Scholar 

  2. 2.

    D. P. Gosain, T. Noguchi, S. Usui, Japanese Journal of Applied Physics. Part 2. 39 (3A-B), L179–81 (2000)

    CAS  Article  Google Scholar 

  3. 3.

    P. G. Carey, P. M. Smith, S. D. Theiss, P. Wickboldt, and T. W. Sigmon, Proc. SPIE - Int. Soc. Opt. Eng. (USA), 3636, 4–10 (1999)

    CAS  Google Scholar 

  4. 4.

    P. Mei, J. B. Boyce, M. Hack, R. Lujan, S. E. Ready, D. K. Fork, R. I. Johnson, and G. B. Anderson, Journal of Applied Physics, 76 (5), 3194–3199 (1994)

    CAS  Article  Google Scholar 

  5. 5.

    James S. Im, H. J. Kim, and Michael O. Thompson, Applied Physics Letters, 63 (14), 1969–1971 (1993)

    CAS  Article  Google Scholar 

  6. 6.

    P. M. Smith, P. G. Carey, and T. W. Sigmon, Applied Physics Letters, 70 (3), 342–344 (1997)

    CAS  Article  Google Scholar 

  7. 7.

    G. Lucovsky, Advanced Materials for optics and electronics, 6, 55–72 (1996)

    CAS  Article  Google Scholar 

  8. 8.

    F. Plais, B. Agius, F. Abel, J. Siejka, M. Puech, G. Ravel, P. Alnot, and N. Proust, Journal of Electrochemical Society, 139 (5), 1489–1495 (1992

    CAS  Article  Google Scholar 

  9. 9.

    Juho Song, P. K. Ajmera, and G. S. Lee, Journal of Vacuum Science Technology. B, 14 (2) 727–731 (1996)

    CAS  Article  Google Scholar 

  10. 10.

    S. K. Ray, C. K. Maiti, S. K. Lahiri, and N. M. Chakrabarti, Journal of Vacuum Science Technology. B, 10 (3), 1139–1150 (1992).

    CAS  Article  Google Scholar 

  11. 11.

    D. M. Reber and S. J. Fonash, Materials Research Society Symposium Proceedings, 508, 121–126 (1998)

    Article  Google Scholar 

  12. 12.

    Masaki Hirayama, Katsuyuki Sekine, Yuji Saito, and Tadahiro Ohmi, International Electron Device Meeting 1999. Technical Digest, 249-252 (1999)

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Correspondence to Wonsuk Chung.

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Chung, W., Thompson, M.O. Effect of Excimer Laser Annealing on Ultra-low Temperature Gate Dielectrics. MRS Online Proceedings Library 685, 1241 (2001). https://doi.org/10.1557/PROC-685-D12.4.1

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