Atomistic Modeling of Amorphization in Silicon

MRS Online Proceedings Library volume 669, Article number: 93 (2001) Cite this article

Abstract

We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures. The DADOS Monte Carlo model has been extended to include the formation of amorphous regions, and this allows simulations of dopant diffusion at high doses. As the dose of ions increases, a continuous amorphous layer may be formed. In that case, most of the excess interstitials generated by the implantation may be swept to the surface as the amorphous layer regrows, instead of diffusing through the crystalline region. This process reduces the amount of transient enhanced diffusion during annealing. This model also reproduces the dynamic annealing during high temperature implants.

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Affiliations

  1. Dept. Electricidad y Electrónica, Universidad de Valladolid, 47011, Valladolid, Spain

    Lourdes Pelaz, Luis A. Marqués & Juan Barbolla

  2. Agere Systems (Formerly Bell Laboratories, Lucent Technologies), 600 Mountain Avenue, Murray Hill, NJ, 07974, USA

    George H. Gilmer

Authors
  1. Lourdes Pelaz
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  2. Luis A. Marqués
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  3. George H. Gilmer
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  4. Juan Barbolla
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Correspondence to Lourdes Pelaz.

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Pelaz, L., Marqués, L.A., Gilmer, G.H. et al. Atomistic Modeling of Amorphization in Silicon. MRS Online Proceedings Library 669, 93 (2001). https://doi.org/10.1557/PROC-669-J9.3

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