Abstract
The method of ion implantation and spike annealing for preparing shallow junctions suitable for the extension regions bridging the channel and source/drain contacts of CMOS transistors are studied by annealing blanket implants. Junction depths at a given sheet resistance for low energy B implants are minimized for the combination of a fast ramp with a sharp-spike anneal. This is shown to be physically based on activation energy phenomenology. The fraction of electrically activated B is insensitive to implant dose, unlike the case of transient enhanced diffusion. Arsenic implants show higher activation fraction than comparably annealed P implants, without the large transient enhanced diffusion which is attributed to P and Si-interstitial coupled diffusion. For targeted sheet resistance and junction depth, spiking temperature trends lower with implant dose, concomitant with decreasing fraction of activated dopant.
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H.-J. Gossmann, C.S. Rafferty, and P. Keys, Mat. Res. Soc. Symp. Proc. 610, B1.2.1 (2000).
S. Saito, S. Shishiguchi, A. Mineji, and T. Matsuda, Mat. Res. Soc. Symp. Proc. 532, 3 (1998).
A.T. Fiory, K.K. Bourdelle, P.K. Roy, Appl. Phys. Lett. 78, 1071 (2001).
A.T. Fiory and K.K. Bourdelle, Appl. Phys. Lett. 74, 2658 (1999).
A. Agarwal, H.-J. Gossmann, D.J. Eaglesham, S.B. Herner, A.T. Fiory, T.E. Haynes, Appl. Phys. Lett 74, 2435 (1999)
H.-J. Gossmann, D.J. Eaglesham, S.B. Herner, A.T. Fiory, T.E. Haynes, Appl. Phys. Lett 74, Ibid., p. 2331.
A. Agarwal, H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes, R. Simonton, Mater. Sci. in Semicond. Proc. 1, 17 (1998).
T.E. Seidel and U. MacRae, Radiation Effects 7, 1 (1971).
C. S. Rafferty, G. H. Gilmer, M. Jaraiz, D. J. Eaglesham, and H.-J. Gossmann, Appl. Phys. Lett. 68, 2395 (1996).
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Bourdelle, K.K., Fiory, A.T., Gossmann, HJ.L. et al. Implant Dose and Spike Anneal Temperature Relationships. MRS Online Proceedings Library 669, 41 (2001). https://doi.org/10.1557/PROC-669-J8.1
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DOI: https://doi.org/10.1557/PROC-669-J8.1