Effect of the Ge preamorphisation dose on the thermal evolution of End of Range defects

Abstract

In this paper, we study the effect of the Ge+ preamorphisation dose on the thermal evolution of End of Range (EOR) defects upon annealing. Amorphisations were carried out by implanting Ge+ at 150 keV to doses ranging from 1×1015 ions/cm2 to 8×1015ions/cm2. Rapid Thermal Annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Plan view transmission electron microscopy under specific imaging conditions was used to measure the size distributions and densities of the EOR defects. We found that for a fixed thermal budget, the increase in the Ge ion dose results in an increase in the defect density but has no effect on the defect size distribution. This invariance of the mean size of defects with respect to the initial supersaturation introduced in the matrix is an expected characteristic of a conservative Ostwald ripening mechanism. Moreover, the total number (Nb) of Si interstitial atoms bound to the EOR defects is a monotonically increasing function of the Ge ion dose. Furthermore, we found that Nb is directly proportional to the number of Si atoms in excess of the vacancies found below the a/c interface as calculated by MonteCarlo simulations. This is consistent with the “excess interstitial” model which explains the origin of the EOR defects.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    S. Thomson, P. Packan, and M. Bohr, Intel Technology Journal Q3, (1998).

    Google Scholar 

  2. 2.

    A. Claverie, B. Colombeau, G. Ben Assayag, C. Bonafos, F. Cristiano, M. Omri and B. de Mauduit, Mat. Sci. in Semic. Proc., 3, 269 (2000).

    CAS  Article  Google Scholar 

  3. 3.

    K.S. Jones and D. Venables, J. Appl. Phys., 69, 2931 (1991).

    CAS  Article  Google Scholar 

  4. 4.

    L. Laanab, C. Bergaud, M.M Faye, J. Faure, A. Martinez and A. Claverie, Mat. Res. Soc. Symp. Proc, 279, 381 (1993).

    CAS  Article  Google Scholar 

  5. 5.

    H. Schroeder, P.F.P. Fichner, H. Trinkaus, Fundamental aspects of inert gases in solids, ed. S.E. Donnely and J.H. Evans, Plenum Press, New-York, 279, 289 (1991).

    CAS  Article  Google Scholar 

  6. 6.

    C. Bonafos, D. Mathiot and A. Claverie, J. Appl. Phys., 83, 3008 (1998).

    CAS  Article  Google Scholar 

  7. 7.

    M. Jaraiz, L. Pelaz, E. Rubio, J. Barbolla, G.H. Gilmer, D.J. Eaglesham, H.J. Gossmann and J.M. Poate, Mat. Res. Soc. Symp. Proc, 532, 3 (1998).

    Article  Google Scholar 

  8. 8.

    C. Bonafos, B. Colombeau, M. Carrada, A. Altibelli, G. Ben Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez and A. Claverie, Nucl. Instr. Meth. in Phys. Res. B, (2001) in print.

    Google Scholar 

  9. 9.

    TRIM-95, after J.F. Ziegler, J.P. Biersack, and D. Littmark. The Stopping and Ranges of Ions in Solids, vol. 1, ed. J.F. Ziegler (Pergamon, New York) (1985).

  10. 10.

    A. Claverie, C. Bonafos, M. Omri, B. de Mauduit, G. Ben Assayag, A. Martinez, D. Alquier and D. Mathiot, Mat. Res. Soc. Symp. Proc, 438, 3 (1997).

    CAS  Article  Google Scholar 

  11. 11.

    E.G. Roth, O.W. Holland and D.K. Thomas, Appl. Phys. Lett., 74, 679 (1999).

    CAS  Article  Google Scholar 

  12. 12.

    M.D. Giles, J. Electrrochem. Soc., 138, 1160 (1991).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to B. Colombeau.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Colombeau, B., Cristiano, F., Marrot, JC. et al. Effect of the Ge preamorphisation dose on the thermal evolution of End of Range defects. MRS Online Proceedings Library 669, 48 (2001). https://doi.org/10.1557/PROC-669-J4.8

Download citation