Skip to main content
SpringerLink
Log in

Characterization of Damage Induced by Cluster Ion Implantation

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Molecular dynamics simulations of boron monomer and small clusters (B4 and B10) impacting on Si(001) were performed in order to investigate the damage formation by monomer/cluster impact. These monomer and clusters show similar implant depth and efficiency, but different damage structures. At the impact of B monomer with 230eV of incident energy, some point-defects such as vacancy-interstitial pairs are mainly formed. On the other hand B10 produces several times larger number of vacancies and interstitials compared with B1, This damage structure is different from one by B1 implantation and due to high yield amorphization of implanted region. This characteristic damage formation process is expected to cause different annihilation process.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K. Goto, J. Matsuo, T. Sugii, H. Minakata, I. Yamada and T. Hisatsugu, IEDM Tech. Digst., 435 (1996).

    Google Scholar 

  2. K. Goto, J. Matsuo, Y. Tada, Y. Momiyama, T. Sugii and I. Yamada, IEDM Tech. Digst., 471 (1997).

    Google Scholar 

  3. T. Aoki, J. Matsuo, Z. Insepov and I. Yamada, 1998 International Conference on Ion Implantation Technology Proceedings, 1254 (1999).

    Google Scholar 

  4. D. J. Eaglesham, P. A. Stolk, H. J. Gossman and J. M. Poate, Appl. Phys. Lett., 65, 2305 (1994).

    Article  CAS  Google Scholar 

  5. K. S. Jones, P. G. Elliman, M. M. Petravic, and P. Kringhoj, Appl. Phys. Lett., 68, 3111 (1996).

    Article  CAS  Google Scholar 

  6. T. Kusaba, N. Shimada, J. Matsuo and I. Yamada, 1998 International Conference on Ion Implantation Technology Proceedings, 1258 (1999).

    Google Scholar 

  7. A. Agarwal, H.-J. gossmann, D. C. Jacobson, D. J. Eaglesham, M. Sosnowski, J. M. Poate, I. Yamada, J. Matsuo and T. E. Haynes, Appl. Phys. Lett., 73, 2015.

  8. F. H. Stillinger and T. A. Weber, Phys. Rev., B31, 5632 (1985).

    Google Scholar 

  9. J. P. Ziegler, J. P. Biersack and U. Littmark, The stopping and range of ions in solids; New York: Pergamon Press (1985).

    Google Scholar 

  10. A. M. C. Perez-Martin, J. Dominguez-Vazquez, J. J. Jimenez-Rodoriguez, Nucl. Instr. and Meth., B164-165, 431 (2000).

    Article  Google Scholar 

  11. M. J. Caturla, T. D. de la Rubia and G. H. Gilmer, Nucl. Instr. and Meth. B106, 1 (1995).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Osaka Science and Technology Center, Utsubo-honmachi, Nishi-ku, Osaka, 550-0004, Japan

    Takaaki Aoki

  2. Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto, 606-8501, Japan

    Takaaki Aoki, Jiro Matsuo & Gikan Takaoka

Authors
  1. Takaaki Aoki
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jiro Matsuo
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Gikan Takaoka
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Aoki, T., Matsuo, J. & Takaoka, G. Characterization of Damage Induced by Cluster Ion Implantation. MRS Online Proceedings Library 669, 45 (2001). https://doi.org/10.1557/PROC-669-J4.5

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-669-J4.5

Search

Navigation