Molecular dynamics simulations of boron monomer and small clusters (B4 and B10) impacting on Si(001) were performed in order to investigate the damage formation by monomer/cluster impact. These monomer and clusters show similar implant depth and efficiency, but different damage structures. At the impact of B monomer with 230eV of incident energy, some point-defects such as vacancy-interstitial pairs are mainly formed. On the other hand B10 produces several times larger number of vacancies and interstitials compared with B1, This damage structure is different from one by B1 implantation and due to high yield amorphization of implanted region. This characteristic damage formation process is expected to cause different annihilation process.
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Aoki, T., Matsuo, J. & Takaoka, G. Characterization of Damage Induced by Cluster Ion Implantation. MRS Online Proceedings Library 669, 45 (2001). https://doi.org/10.1557/PROC-669-J4.5