A new model for Boron diffusion retardation in SiGe-strained layers accounting for the mechanism of Boron trapping/detrapping by Ge atoms

MRS Online Proceedings Library volume 669, Article number: 34 (2001) Cite this article

Abstract

The main drawbacks of the known models of the B diffusion in strained SiGe layers are summarized. A mechanism is suggested to self-consistently explain the main experimental features and original experimental data which considers the trapping of B atoms by Ge atoms during B diffusion in the Si lattice resulting in the retarded B diffusivity. Fluctuations of Ge atom numbers in a nearest B atom environment result in percolation mechanism of B transport through dilatation centers of random size. A new solid state transport modelis generalized by considering dispersion transport of positive and negative point dilatation defects.

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    Victor I. Kol’dyaev

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Kol’dyaev, V.I. A new model for Boron diffusion retardation in SiGe-strained layers accounting for the mechanism of Boron trapping/detrapping by Ge atoms. MRS Online Proceedings Library 669, 34 (2001). https://doi.org/10.1557/PROC-669-J3.4

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