Photoluminescence study of defects induced by B₁₀H₁₄ ions

Abstract

Defect formation in Si by B₁₀H₁₄ (decaborane) ion implantation has been investigated with photoluminescence measurement. An intense W-line was observed at photon energy of 1.018eV from as-implanted FZ-Si by 30keV B₁₀H₁₄⁺ implantation. W-line center is considered as an interstitial aggregate and usually observed after ion implantation with subsequent low-temperatureannealing in the case of atomic ion implantation. As W-line is observed from as-implanted Si, the defect formation with B₁₀H₁₄ is expected to be different from that of B⁺ implantation with the same energy per atom. The energy dependence of W-line intensity is similar to that of diffusivity enhancement after rapid thermal annealing. Molecular dynamics simulation and Rutherford backscattering spectrometry channeling experiment suggest that one B₁₀H₁₄ implantation creates a larger number of dislocated Si atoms than that of B⁺ implantation with the same energy per atom. This characteristic of B₁₀H₁₄ implantation may cause the different defect reactions in subsequent annealing process.