Photoluminescence study of defects induced by B10H14 ions


Defect formation in Si by B10H14 (decaborane) ion implantation has been investigated with photoluminescence measurement. An intense W-line was observed at photon energy of 1.018eV from as-implanted FZ-Si by 30keV B10H14+ implantation. W-line center is considered as an interstitial aggregate and usually observed after ion implantation with subsequent low-temperatureannealing in the case of atomic ion implantation. As W-line is observed from as-implanted Si, the defect formation with B10H14 is expected to be different from that of B+ implantation with the same energy per atom. The energy dependence of W-line intensity is similar to that of diffusivity enhancement after rapid thermal annealing. Molecular dynamics simulation and Rutherford backscattering spectrometry channeling experiment suggest that one B10H14 implantation creates a larger number of dislocated Si atoms than that of B+ implantation with the same energy per atom. This characteristic of B10H14 implantation may cause the different defect reactions in subsequent annealing process.

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Correspondence to Noriaki Toyoda.

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Toyoda, N., Aoki, T., Matsuo, J. et al. Photoluminescence study of defects induced by B10H14 ions. MRS Online Proceedings Library 669, 204 (2001).

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