Conductance Imaging of the Depletion Region of Biased Silicon PN Junction Device

Abstract

Simultaneous conductance imaging and constant current mode STM imaging have been used to delineate Si pn junction arrays over a range of reverse bias conditions. Conductance has been obtained by adding a modulation signal to voltages applied in the p and n regions of a model device, and by measuring the modulation signal of the tunneling current with a lock-in amplifier. Both constant current and conductance imaging ofthe electrically different regions (n, p, and depletion zone) show a pronounced dependence on applied pn junction bias. The conductance contrast is mainly due to electrically different behaviors of metal-gap-semiconductor junction which are determined by the tip-induced band bending of the oxide-passivated silicon surface.

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Correspondence to Jeong Young Park.

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Park, J.Y., Phaneuf, R.J. & Williams, E.D. Conductance Imaging of the Depletion Region of Biased Silicon PN Junction Device. MRS Online Proceedings Library 669, 23 (2001). https://doi.org/10.1557/PROC-669-J2.3

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