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Genesis of Defects in Massively Transformed L10-ordered τ-MnAl Alloys

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Abstract

Defects produced in massively transformed L10-ordered t-MnAl have been characterized by detailed TEM studies. The defect population in massive t-MnAl comprises arrays of overlapping stacking faults, {111}-conjugated microtwins, thermal antiphase boundaries and dislocations. The genesis of these defects has been attributed to atomic attachment faulting on {111}- and {020}-type facets of the essentially incoherent growth interface between the parent and product phases. The features of the defect genesis in t-MnAl are discussed with respect to the role of atomic level processes at solid-state transformation interfaces in general and growth interfaces in massively transforming materials systems in particular.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Pittsburgh, Pittsburgh, PA, 15261, USA

    Cagatay Yanar, Velimir Radmilovic & William A. Soffa

  2. National Center for Electron Microscopy, LBNL, Berkeley, CA, USA

    Cagatay Yanar

  3. Department of Physical Metallurgy, University of Belgrade, 11001, Belgrade, Yugoslavia

    Jorg M. K. Wiezorek

Authors
  1. Cagatay Yanar
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  2. Velimir Radmilovic
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  3. William A. Soffa
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  4. Jorg M. K. Wiezorek
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Yanar, C., Radmilovic, V., Soffa, W.A. et al. Genesis of Defects in Massively Transformed L10-ordered τ-MnAl Alloys. MRS Online Proceedings Library 652, 83 (2000). https://doi.org/10.1557/PROC-652-Y8.3

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  • DOI: https://doi.org/10.1557/PROC-652-Y8.3

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