Genesis of Defects in Massively Transformed L10-ordered τ-MnAl Alloys

Abstract

Defects produced in massively transformed L10-ordered t-MnAl have been characterized by detailed TEM studies. The defect population in massive t-MnAl comprises arrays of overlapping stacking faults, {111}-conjugated microtwins, thermal antiphase boundaries and dislocations. The genesis of these defects has been attributed to atomic attachment faulting on {111}- and {020}-type facets of the essentially incoherent growth interface between the parent and product phases. The features of the defect genesis in t-MnAl are discussed with respect to the role of atomic level processes at solid-state transformation interfaces in general and growth interfaces in massively transforming materials systems in particular.

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Correspondence to Cagatay Yanar.

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Yanar, C., Radmilovic, V., Soffa, W.A. et al. Genesis of Defects in Massively Transformed L10-ordered τ-MnAl Alloys. MRS Online Proceedings Library 652, 83 (2000). https://doi.org/10.1557/PROC-652-Y8.3

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