Abstract
We have studied the nucleation and growth of alumina by metalorganic chemical vapor deposition (MOCVD). The deposition of alumina films was carried out on Si(100) in a horizontal, hot-wall, low pressure chemical vapor deposition (CVD) reactor, using aluminum acetylacetonate{Al(acac)3} as the CVD precursor. We have investigated growth of alumina films as a function of different CVD parameters such as substrate temperature and total reactor pressure during film growth. Films were characterized by optical microscopy, X-ray diffractometry (XRD), scanning electron microscopy (SEM), cross-sectional SEM, and secondary ion mass spectrometry (SIMS) compositional depth profiling. The chemical analysis reveals that the carbon is present throughout the depth of the films.
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Singh, M.P., Mukhopadhayay, S., Devi, A. et al. A Study of Nucleation and Growth in MOCVD: The Growth of Thin Films of Alumina. MRS Online Proceedings Library 648, 647 (2000). https://doi.org/10.1557/PROC-648-P6.47
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DOI: https://doi.org/10.1557/PROC-648-P6.47