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A Study of Nucleation and Growth in MOCVD: The Growth of Thin Films of Alumina

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Abstract

We have studied the nucleation and growth of alumina by metalorganic chemical vapor deposition (MOCVD). The deposition of alumina films was carried out on Si(100) in a horizontal, hot-wall, low pressure chemical vapor deposition (CVD) reactor, using aluminum acetylacetonate{Al(acac)3} as the CVD precursor. We have investigated growth of alumina films as a function of different CVD parameters such as substrate temperature and total reactor pressure during film growth. Films were characterized by optical microscopy, X-ray diffractometry (XRD), scanning electron microscopy (SEM), cross-sectional SEM, and secondary ion mass spectrometry (SIMS) compositional depth profiling. The chemical analysis reveals that the carbon is present throughout the depth of the films.

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Authors and Affiliations

  1. Indian Institute of Science, Materials Research Centre, Bangalore, 560 012, India

    M. P. Singh, S. Mukhopadhayay & S. A. Shivashankar

  2. Lehrstuhle fuer Anorganische Chemie-II, Ruhr-Universitaet Bochum, Germany

    Anjana Devi

Authors
  1. M. P. Singh
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  2. S. Mukhopadhayay
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  3. Anjana Devi
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  4. S. A. Shivashankar
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Singh, M.P., Mukhopadhayay, S., Devi, A. et al. A Study of Nucleation and Growth in MOCVD: The Growth of Thin Films of Alumina. MRS Online Proceedings Library 648, 647 (2000). https://doi.org/10.1557/PROC-648-P6.47

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  • DOI: https://doi.org/10.1557/PROC-648-P6.47

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