Mechanisms in embedded selective epitaxy and overgrowth of an integrated laser/modulator quantum well structure using MOMBE and MOVPE

MRS Online Proceedings Library volume 648, Article number: 646 (2000) Cite this article

Abstract

Lateral integration of optoelectronic devices comprising strained multiple quantum well (MQW) structures can most successfully be accomplished by selective area epitaxy using metal organic molecular beam epitaxy (MOMBE). We optimized the growth parameters with respect to a planar butt coupling and sharp, flat MQW interfaces in an integrated MQW laser / MQW modulator structure. Defect generation in metal organic vapor phase epitaxy (MOVPE) overgrown cladding layers is analyzed and shown to contain information about the quality of the buried butt coupling. A ridge waveguide structure has successfully been fabricated from an optimized integrated laser / modulator structure.

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Affiliations

  1. Corporate Research CPR PH, Infineon Technologies, D-81730, Munich, Germany

    Philipp Kröner, Horst Baumeister, Roland Gessner, Josef Rieger, Michael Schier, Eberhard Veuhoff & Harald Heinecke

  2. Department of Experimental Physics, University of Ulm, D-89069, Ulm, Germany

    Philipp Kröner & Othmar Marti

Authors
  1. Philipp Kröner
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  2. Horst Baumeister
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  3. Roland Gessner
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  4. Josef Rieger
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  5. Michael Schier
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  6. Eberhard Veuhoff
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  7. Othmar Marti
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  8. Harald Heinecke
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Correspondence to Philipp Kröner.

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Kröner, P., Baumeister, H., Gessner, R. et al. Mechanisms in embedded selective epitaxy and overgrowth of an integrated laser/modulator quantum well structure using MOMBE and MOVPE. MRS Online Proceedings Library 648, 646 (2000). https://doi.org/10.1557/PROC-648-P6.46

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